Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

doi:10.1088/1674-1056/ab6962

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/ab6962

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

收稿日期:2019-10-22 修回日期:2019-12-25 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Jie Yang E-mail:yangjie_zzu2@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256) and the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017).

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

Ying-Hui Zhong(钟英辉)¹, Bo Yang(杨博)¹, Ming-Ming Chang(常明铭)¹, Peng Ding(丁芃)², Liu-Hong Ma(马刘红)¹, Meng-Ke Li(李梦珂)¹, Zhi-Yong Duan(段智勇)¹, Jie Yang(杨洁)¹, Zhi Jin(金智)^2,3, Zhi-Chao Wei(魏志超)³

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

Received:2019-10-22 Revised:2019-12-25 Online:2020-03-05 Published:2020-03-05
Contact: Jie Yang E-mail:yangjie_zzu2@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256) and the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017).

摘要/Abstract

摘要： An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5×10¹¹ cm^-2, 1×10¹² cm^-2, and 5×10¹² cm^-2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5×10¹² cm^-2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

关键词: InP-based HEMT, anti-radiation, proton irradiation, Si-doped plane

Abstract: An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5×10¹¹ cm^-2, 1×10¹² cm^-2, and 5×10¹² cm^-2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5×10¹² cm^-2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

Key words: InP-based HEMT, anti-radiation, proton irradiation, Si-doped plane

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.61.Ey (III-V semiconductors) 14.20.Dh (Protons and neutrons)

钟英辉, 杨博, 常明铭, 丁芃, 马刘红, 李梦珂, 段智勇, 杨洁, 金智, 魏志超. Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane[J]. 中国物理B, 2020, 29(3): 38502-038502.

Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超). Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane[J]. Chin. Phys. B, 2020, 29(3): 38502-038502.

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Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

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