Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
钟英辉, 杨博, 常明铭, 丁芃, 马刘红, 李梦珂, 段智勇, 杨洁, 金智, 魏志超
Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
中国物理B
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2020, (3): 38502
-038502
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DOI: 10.1088/1674-1056/ab6962