中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107803-107803.doi: 10.1088/1674-1056/ab4046

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells

Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武)   

  1. 1 School of Microelectronics, Shandong University, Jinan 250100, China;
    2 School of Physics and Electronic Engineering, Taishan University, Taian 271000, China;
    3 Key Laboratory of Functional Crystal Materials and Devices(Ministry of Education), Shandong University, Jinan 250100, China
  • 收稿日期:2019-06-24 修回日期:2019-08-16 出版日期:2019-10-05 发布日期:2019-10-05
  • 通讯作者: Zi-Wu Ji E-mail:jiziwu@sdu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51672163, 51872167, and 61504044) and the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112).

Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells

Chang-Fu Li(李长富)1,2, Kai-Ju Shi(时凯居)1, Ming-Sheng Xu(徐明升)1, Xian-Gang Xu(徐现刚)3, Zi-Wu Ji(冀子武)1   

  1. 1 School of Microelectronics, Shandong University, Jinan 250100, China;
    2 School of Physics and Electronic Engineering, Taishan University, Taian 271000, China;
    3 Key Laboratory of Functional Crystal Materials and Devices(Ministry of Education), Shandong University, Jinan 250100, China
  • Received:2019-06-24 Revised:2019-08-16 Online:2019-10-05 Published:2019-10-05
  • Contact: Zi-Wu Ji E-mail:jiziwu@sdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51672163, 51872167, and 61504044) and the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112).

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摘要： The photoluminescence (PL) properties of blue multiple InGaN/GaN quantum well (BMQW) and green multiple InGaN/GaN quantum well (GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission (PG) exhibits more significant “S-shaped” dependence on temperature than that of BMQW-related emission (PB), and the excitation power-dependent carrier-scattering effect is observed only in the PG emission; the excitation power-dependent total blue-shift (narrowing) of peak position (line-width) for the PG emission is more significant than that for the PB emission; the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.

关键词: photoluminescence, multiple quantum wells, localization effect, light-emitting diodes

Abstract: The photoluminescence (PL) properties of blue multiple InGaN/GaN quantum well (BMQW) and green multiple InGaN/GaN quantum well (GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission (PG) exhibits more significant “S-shaped” dependence on temperature than that of BMQW-related emission (PB), and the excitation power-dependent carrier-scattering effect is observed only in the PG emission; the excitation power-dependent total blue-shift (narrowing) of peak position (line-width) for the PG emission is more significant than that for the PB emission; the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.

Key words: photoluminescence, multiple quantum wells, localization effect, light-emitting diodes

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
78.67.De (Quantum wells) 72.15.Rn (Localization effects (Anderson or weak localization)) 85.60.Jb (Light-emitting devices)