中国物理B ›› 2019, Vol. 28 ›› Issue (8): 88103-088103.doi: 10.1088/1674-1056/28/8/088103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Study on the nitridation of β-Ga2O3 films

Fei Cheng(程菲), Yue-Wen Li(李悦文), Hong Zhao(赵红), Xiang-Qian Xiu(修向前), Zhi-Tai Jia(贾志泰), Duo Liu(刘铎), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓)   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2019-05-12 修回日期:2019-06-19 出版日期:2019-08-05 发布日期:2019-08-05
  • 通讯作者: Hong Zhao, Xiang-Qian Xiu, Rong Zhang E-mail:zhaohong@nju.edu.cn;xqxiu@nju.edu.cn;rzhang@nju.edu.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404201), the Six-Talent Peaks Project in Jiangsu Province, China (Grant No. XCL-107), the State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Study on the nitridation of β-Ga2O3 films

Fei Cheng(程菲)1, Yue-Wen Li(李悦文)1, Hong Zhao(赵红)1, Xiang-Qian Xiu(修向前)1,2, Zhi-Tai Jia(贾志泰)2, Duo Liu(刘铎)2, Xue-Mei Hua(华雪梅)1, Zi-Li Xie(谢自力)1, Tao Tao(陶涛)1, Peng Chen(陈鹏)1, Bin Liu(刘斌)1, Rong Zhang(张荣)1, You-Dou Zheng(郑有炓)1   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2019-05-12 Revised:2019-06-19 Online:2019-08-05 Published:2019-08-05
  • Contact: Hong Zhao, Xiang-Qian Xiu, Rong Zhang E-mail:zhaohong@nju.edu.cn;xqxiu@nju.edu.cn;rzhang@nju.edu.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404201), the Six-Talent Peaks Project in Jiangsu Province, China (Grant No. XCL-107), the State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

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摘要：

Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

关键词: β-Ga2O3, nitridation, GaN, single-crystal

Abstract:

Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

Key words: β-Ga2O3, nitridation, GaN, single-crystal

中图分类号:  (Surface hardening: nitridation, carburization, carbonitridation ?)

  • 81.65.Lp
81.05.Ea (III-V semiconductors) 61.05.cp (X-ray diffraction)