Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers

doi:10.1088/1674-1056/28/1/017305

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17305-017305.doi: 10.1088/1674-1056/28/1/017305

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Xia Wang(王霞), Zhen-Ping Wu(吴真平), Wei Cui(崔尉), Yu-Song Zhi(支钰崧), Zhi-Peng Li(李志鹏), Pei-Gang Li(李培刚), Dao-You Guo(郭道友), Wei-Hua Tang(唐为华)

1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100876, China;
4 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

收稿日期:2018-10-08 修回日期:2018-11-07 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Wei-Hua Tang E-mail:whtang@bupt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 51572241, 61774019, 61704153, and 11404029), the Fund of State Key Laboratory of IPOC (BUPT), and the Open Fund of IPOC (BUPT), Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Xia Wang(王霞)^1,2, Zhen-Ping Wu(吴真平)^1,2, Wei Cui(崔尉)^1,2, Yu-Song Zhi(支钰崧)^1,2, Zhi-Peng Li(李志鹏)³, Pei-Gang Li(李培刚)^1,2, Dao-You Guo(郭道友)⁴, Wei-Hua Tang(唐为华)^1,2

1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100876, China;
4 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

Received:2018-10-08 Revised:2018-11-07 Online:2019-01-05 Published:2019-01-05
Contact: Wei-Hua Tang E-mail:whtang@bupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 51572241, 61774019, 61704153, and 11404029), the Fund of State Key Laboratory of IPOC (BUPT), and the Open Fund of IPOC (BUPT), Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

摘要/Abstract

摘要：

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga₂O₃ thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga₂O₃ thin films using the water-soluble perovskite Sr₃Al₂O₆ as a sacrificial buffer layer. The obtained Ga₂O₃ thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga₂O₃ solar-blind UV photodetector was fabricated by transferring the free-standing Ga₂O₃ film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga₂O₃ photodetector were not sensitive to bending of the device. The free-standing Ga₂O₃ thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.

关键词: free-standing Ga₂O₃ thin film, crystalline, Sr₃Al₂O₆, flexible photodetector

Abstract:

Key words: free-standing Ga₂O₃ thin film, crystalline, Sr₃Al₂O₆, flexible photodetector

中图分类号: (Electronic structure of graphene)

73.22.Pr

67.30.hr (Films) 71.20.Nr (Semiconductor compounds) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

王霞, 吴真平, 崔尉, 支钰崧, 李志鹏, 李培刚, 郭道友, 唐为华. Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers[J]. 中国物理B, 2019, 28(1): 17305-017305.

Xia Wang(王霞), Zhen-Ping Wu(吴真平), Wei Cui(崔尉), Yu-Song Zhi(支钰崧), Zhi-Peng Li(李志鹏), Pei-Gang Li(李培刚), Dao-You Guo(郭道友), Wei-Hua Tang(唐为华). Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers[J]. Chin. Phys. B, 2019, 28(1): 17305-017305.

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Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

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