中国物理B ›› 2019, Vol. 28 ›› Issue (5): 56107-056107.doi: 10.1088/1674-1056/28/5/056107

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)

Hui Guo(郭辉), Hui Chen(陈辉), Yande Que(阙炎德), Qi Zheng(郑琦), Yu-Yang Zhang(张余洋), Li-Hong Bao(鲍丽宏), Li Huang(黄立), Ye-Liang Wang(王业亮), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧)   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Beijing 100190, China;
    2 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2019-02-27 修回日期:2019-03-21 出版日期:2019-05-05 发布日期:2019-05-05
  • 通讯作者: Shi-Xuan Du E-mail:sxdu@iphy.ac.cn

Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)

Hui Guo(郭辉)1, Hui Chen(陈辉)1, Yande Que(阙炎德)1, Qi Zheng(郑琦)1, Yu-Yang Zhang(张余洋)1,2, Li-Hong Bao(鲍丽宏)1, Li Huang(黄立)1, Ye-Liang Wang(王业亮)1, Shi-Xuan Du(杜世萱)1,2, Hong-Jun Gao(高鸿钧)1,2   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Beijing 100190, China;
    2 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • Received:2019-02-27 Revised:2019-03-21 Online:2019-05-05 Published:2019-05-05
  • Contact: Shi-Xuan Du E-mail:sxdu@iphy.ac.cn

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摘要：

Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow graphene with a single orientation at a relatively low temperature. Here, we report the growth of large-scale, single-crystalline graphene on Ir(111) substrate at a temperature as low as 800 K using an oxygen-etching assisted epitaxial growth method. We firstly grow polycrystalline graphene on Ir. The subsequent exposure of oxygen leads to etching of the misaligned domains. Additional growth cycle, in which the leftover aligned domain serves as a nucleation center, results in a large-scale and single-crystalline graphene layer on Ir(111). Low-energy electron diffraction, scanning tunneling microscopy, and Raman spectroscopy experiments confirm the successful growth of large-scale and single-crystalline graphene. In addition, the fabricated single-crystalline graphene is transferred onto a SiO2/Si substrate. Transport measurements on the transferred graphene show a carrier mobility of about 3300 cm2·V-1·s-1. This work provides a way for the synthesis of large-scale, high-quality graphene on weak-coupled metal substrates.

关键词: graphene, low-temperature growth, single-crystalline, Ir(111)

Abstract:

Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow graphene with a single orientation at a relatively low temperature. Here, we report the growth of large-scale, single-crystalline graphene on Ir(111) substrate at a temperature as low as 800 K using an oxygen-etching assisted epitaxial growth method. We firstly grow polycrystalline graphene on Ir. The subsequent exposure of oxygen leads to etching of the misaligned domains. Additional growth cycle, in which the leftover aligned domain serves as a nucleation center, results in a large-scale and single-crystalline graphene layer on Ir(111). Low-energy electron diffraction, scanning tunneling microscopy, and Raman spectroscopy experiments confirm the successful growth of large-scale and single-crystalline graphene. In addition, the fabricated single-crystalline graphene is transferred onto a SiO2/Si substrate. Transport measurements on the transferred graphene show a carrier mobility of about 3300 cm2·V-1·s-1. This work provides a way for the synthesis of large-scale, high-quality graphene on weak-coupled metal substrates.

Key words: graphene, low-temperature growth, single-crystalline, Ir(111)

中图分类号:  (Structure of graphene)

  • 61.48.Gh
61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 72.80.Vp (Electronic transport in graphene)