中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17401-017401.doi: 10.1088/1674-1056/28/1/017401

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS3

Yi Yu(于一), Chunchang Wang(汪春昌), Liang Li(李亮), Qiuju Li(李秋菊), Chao Cheng(程超), Shuting Wang(王舒婷), Changjin Zhang(张昌锦)   

  1. 1 School of Physics and Material Science, Anhui University, Hefei 230601, China;
    2 Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
    3 High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2018-09-09 修回日期:2018-10-15 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Yi Yu E-mail:onlyyuyi@mail.ustc.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572001, 11404002, and 11404003) and the ‘211 Project’ of Anhui University, China (Grant No. J01001319J10113190007).

Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS3

Yi Yu(于一)1, Chunchang Wang(汪春昌)1, Liang Li(李亮)2, Qiuju Li(李秋菊)1, Chao Cheng(程超)2, Shuting Wang(王舒婷)1, Changjin Zhang(张昌锦)3   

  1. 1 School of Physics and Material Science, Anhui University, Hefei 230601, China;
    2 Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
    3 High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230026, China
  • Received:2018-09-09 Revised:2018-10-15 Online:2019-01-05 Published:2019-01-05
  • Contact: Yi Yu E-mail:onlyyuyi@mail.ustc.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572001, 11404002, and 11404003) and the ‘211 Project’ of Anhui University, China (Grant No. J01001319J10113190007).

RichHTML

2

PDF (PC)

165

赞

摘要：

The transport and thermoelectric properties together with annealing of the new layered Bi-chalcogenide LaOBiHgS3 are studied. On the transport part, the insulating behavior of the as-grown sample is evidently depressed by post annealing. A hump-like abnormality appears around 170 K. The thermoelectric performance of the sample is observably improved by the annealing, mainly because of the enhanced electrical conductance. The present results suggest that the physical properties of LaOBiHgS3 are sensitive to post annealing and the possible micro adjustments that follow, indicating the layered Bi-chalcogenide family to be an ideal platform for designing novel functional materials.

关键词: thermoelectric material, Bi-chalcogenide, post annealing

Abstract:

The transport and thermoelectric properties together with annealing of the new layered Bi-chalcogenide LaOBiHgS3 are studied. On the transport part, the insulating behavior of the as-grown sample is evidently depressed by post annealing. A hump-like abnormality appears around 170 K. The thermoelectric performance of the sample is observably improved by the annealing, mainly because of the enhanced electrical conductance. The present results suggest that the physical properties of LaOBiHgS3 are sensitive to post annealing and the possible micro adjustments that follow, indicating the layered Bi-chalcogenide family to be an ideal platform for designing novel functional materials.

Key words: thermoelectric material, Bi-chalcogenide, post annealing

中图分类号:  (Transport properties)

  • 74.25.F-
74.62.En (Effects of disorder) 74.20.Rp (Pairing symmetries (other than s-wave)) 74.70.Xa (Pnictides and chalcogenides)