Review of gallium oxide based field-effect transistors and Schottky barrier diodes

doi:10.1088/1674-1056/28/1/017105

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17105-017105.doi: 10.1088/1674-1056/28/1/017105

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华)

1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 China Aerospace Academy of Systems Science and Engineering, Beijing 100048, China

收稿日期:2018-08-13 修回日期:2018-11-04 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019, 51572033, and 51572241) and the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Zeng Liu(刘增)^1,2, Pei-Gang Li(李培刚)^1,2, Yu-Song Zhi(支钰崧)^1,2, Xiao-Long Wang(王小龙)^1,2, Xu-Long Chu(褚旭龙)^1,3, Wei-Hua Tang(唐为华)^1,2

1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 China Aerospace Academy of Systems Science and Engineering, Beijing 100048, China

Received:2018-08-13 Revised:2018-11-04 Online:2019-01-05 Published:2019-01-05
Contact: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019, 51572033, and 51572241) and the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

摘要/Abstract

摘要： Gallium oxide (Ga₂O₃), a typical ultra wide bandgap semiconductor, with a bandgap of~4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga₂O₃ in power devices has been aroused. Many researches have verified that Ga₂O₃ is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga₂O₃, which may provide a guideline for Ga₂O₃ to be preferably used in power devices fabrication.

关键词: gallium oxide (Ga₂O₃), field-effect transistors (FETs), Schottky barrier diodes (SBDs)

Abstract: Gallium oxide (Ga₂O₃), a typical ultra wide bandgap semiconductor, with a bandgap of~4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga₂O₃ in power devices has been aroused. Many researches have verified that Ga₂O₃ is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga₂O₃, which may provide a guideline for Ga₂O₃ to be preferably used in power devices fabrication.

Key words: gallium oxide (Ga₂O₃), field-effect transistors (FETs), Schottky barrier diodes (SBDs)

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

72.20.-i (Conductivity phenomena in semiconductors and insulators) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

刘增, 李培刚, 支钰崧, 王小龙, 褚旭龙, 唐为华. Review of gallium oxide based field-effect transistors and Schottky barrier diodes[J]. 中国物理B, 2019, 28(1): 17105-017105.

Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华). Review of gallium oxide based field-effect transistors and Schottky barrier diodes[J]. Chin. Phys. B, 2019, 28(1): 17105-017105.

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Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

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