Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition

doi:10.1088/1674-1056/abaee7

中国物理B ›› 2020, Vol. 29 ›› Issue (10): 107102-.doi: 10.1088/1674-1056/abaee7

Bingheng Meng(孟兵恒)¹, Dengkui Wang(王登魁)¹^,†(), Deshuang Guo(郭德双)¹, Juncheng Liu(刘俊成)¹, Xuan Fang(方铉)¹, Jilong Tang(唐吉龙)¹, Fengyuan Lin(林逢源)¹, Xinwei Wang(王新伟)¹, Dan Fang(房丹)¹, Zhipeng Wei(魏志鹏)¹^,‡()

收稿日期:2020-01-16 修回日期:2020-07-30 接受日期:2020-08-13 出版日期:2020-10-05 发布日期:2020-10-05
通讯作者: Dengkui Wang(王登魁), Zhipeng Wei(魏志鹏)

Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition

¹ State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

Received:2020-01-16 Revised:2020-07-30 Accepted:2020-08-13 Online:2020-10-05 Published:2020-10-05
Contact: ^†Corresponding author. E-mail: wccwss@foxmail.com ^‡Corresponding author. E-mail: zpweicust@126.com
About author:
†Corresponding author. E-mail: wccwss@foxmail.com
‡Corresponding author. E-mail: zpweicust@126.com
* Project supported by the National Natural Science Foundation of China (Grant Nos. 11674038, 61674021, 61704011, and 61904017), the Developing Project of Science and Technology of Jilin Province, China (Grant Nos. 20170520118JH and 20160520027JH), and the Youth Foundation of Changchun University of Science and Technology (Grant No. XQNJJ-2018-18).

摘要/Abstract

Abstract:

Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H₂O as the oxide source. The effect of the source temperature on the quality of vanadium oxide films and valence state was investigated. The crystallinity, surface morphology, film thickness, and photoelectric properties of the films were characterized by x-ray diffraction, atomic force microscope, scanning electron microscope, I–V characteristics curves, and UV–visible spectrophotometer. By varying the source temperature, the content of V₆O₁₁, VO₂, and V₆O₁₃ in the vanadium oxide film increased, that is, as the temperature increased, the average oxidation state generally decreased to a lower value, which is attributed to the rising of the vapor pressure and the change of the ionization degree for organometallics. Meanwhile, the root-mean-square roughness decreased and the metal–insulator transition temperature reduced. Our study is great significance for the fabrication of vanadium oxide films by atomic layer deposition.

Key words: vanadium oxide films, atomic layer deposition, source temperature, valence state

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

61.50.Nw (Crystal stoichiometry) 61.05.cp (X-ray diffraction)

Bingheng Meng(孟兵恒), Dengkui Wang(王登魁), Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), Zhipeng Wei(魏志鹏). [J]. 中国物理B, 2020, 29(10): 107102-.

Bingheng Meng(孟兵恒), Dengkui Wang(王登魁)†, Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), and Zhipeng Wei(魏志鹏)‡. Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition[J]. Chin. Phys. B, 2020, 29(10): 107102-.

图/表 5

参考文献 26

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Source temperature/°C	I_V₂O₅ / I_Al₂O₃	I_V₄O₉ / I_Al₂O₃	I_V₆O₁₃ / I_Al₂O₃	I_VO₂ / I_Al₂O₃	I_V₆O₁₁ / I_Al₂O₃
90	3.09	2.24	1.91	0	0
100	3.51	0	1.08	1.37	3.57
110	7.27	0	2.31	3.86	10.12

Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition

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