中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17104-017104.doi: 10.1088/1674-1056/28/1/017104

所属专题: TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

Fang-Yu Yue(越方禹), Su-Yu Ma(马骕驭), Jin Hong(洪进), Ping-Xiong Yang(杨平雄), Cheng-Bin Jing(敬承斌), Ye Chen(陈晔), Jun-Hao Chu(褚君浩)   

  1. 1 Key Laboratory of Polar Materials and Devices(MOE), Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China;
    2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 收稿日期:2018-10-17 修回日期:2018-11-14 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Fang-Yu Yue E-mail:fyyue@ee.ecnu.edu.cn
  • 基金资助:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

Fang-Yu Yue(越方禹)1, Su-Yu Ma(马骕驭)1, Jin Hong(洪进)1, Ping-Xiong Yang(杨平雄)1, Cheng-Bin Jing(敬承斌)1, Ye Chen(陈晔)1, Jun-Hao Chu(褚君浩)1,2   

  1. 1 Key Laboratory of Polar Materials and Devices(MOE), Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China;
    2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2018-10-17 Revised:2018-11-14 Online:2019-01-05 Published:2019-01-05
  • Contact: Fang-Yu Yue E-mail:fyyue@ee.ecnu.edu.cn
  • Supported by:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

摘要: Narrow-gap Hg1-xCdxTe material with a composition x of about 0.3 plays an extremely important role in mid-infrared detection applications. In this work, the optical properties of doped HgCdTe with x≈ 0.3 are reviewed, including the defects and defect levels of intrinsic VHg and the extrinsic amphoteric arsenic (As) dopants, which can act as shallow/deep donors and acceptors. The influence of the defects on the determination of band-edge electronic structure is discussed when absorption or photoluminescence spectra are considered. The inconsistency between these two optical techniques is demonstrated and analyzed by taking into account the Fermi level position as a function of composition, doping level, conductivity type, and temperature. The defect level and its evolution, especially in As-doped HgCdTe, are presented. Our results provide a systematic understanding of the mechanisms and help for optimizing annealing conditions towards p-type As-activation, and eventually for fabricating high performance mid-infrared detectors.

关键词: HgCdTe, defects, annealing procedures, optical characterization

Abstract: Narrow-gap Hg1-xCdxTe material with a composition x of about 0.3 plays an extremely important role in mid-infrared detection applications. In this work, the optical properties of doped HgCdTe with x≈ 0.3 are reviewed, including the defects and defect levels of intrinsic VHg and the extrinsic amphoteric arsenic (As) dopants, which can act as shallow/deep donors and acceptors. The influence of the defects on the determination of band-edge electronic structure is discussed when absorption or photoluminescence spectra are considered. The inconsistency between these two optical techniques is demonstrated and analyzed by taking into account the Fermi level position as a function of composition, doping level, conductivity type, and temperature. The defect level and its evolution, especially in As-doped HgCdTe, are presented. Our results provide a systematic understanding of the mechanisms and help for optimizing annealing conditions towards p-type As-activation, and eventually for fabricating high performance mid-infrared detectors.

Key words: HgCdTe, defects, annealing procedures, optical characterization

中图分类号:  (Impurity and defect levels)

  • 71.55.-i
71.55.Gs (II-VI semiconductors) 78.55.-m (Photoluminescence, properties and materials) 61.72.Cc (Kinetics of defect formation and annealing)