Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

doi:10.1088/1674-1056/27/7/077106

中国物理B ›› 2018, Vol. 27 ›› Issue (7): 77106-077106.doi: 10.1088/1674-1056/27/7/077106

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

Can Qi(齐灿), Jun Hu(胡军)

1 School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
2 Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China

收稿日期:2018-03-19 修回日期:2018-04-18 出版日期:2018-07-05 发布日期:2018-07-05
通讯作者: Jun Hu E-mail:jhu@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11574223), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20150303), and the Jiangsu Specially-Appointed Professor Program of Jiangsu Province, China.

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

Can Qi(齐灿)^1,2, Jun Hu(胡军)^1,2

1 School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
2 Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China

Received:2018-03-19 Revised:2018-04-18 Online:2018-07-05 Published:2018-07-05
Contact: Jun Hu E-mail:jhu@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11574223), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20150303), and the Jiangsu Specially-Appointed Professor Program of Jiangsu Province, China.

摘要/Abstract

摘要：

Two-dimensional (2D) ferromagnetic (FM) materials have great potential for applications in next-generation spintronic devices. Since most 2D FM materials come from van der Waals crystals, stabilizing them on a certain substrate without killing the ferromagnetism is still a challenge. Through systematic first-principles calculations, we proposed a new family of 2D FM materials which combines TaX (X=S, Se or Te) monolayer and Al₂O₃(0001) substrate. The TaX monolayers provide magnetic states and the Al₂O₃(0001) substrate stabilizes the former. Interestingly, the Al₂O₃(0001) substrate leads to a metal-to-insulator transition in the TaX monolayers and induces a band gap up to 303 meV. Our study paves the way to explore promising 2D FM materials for practical applications in spintronics devices.

关键词: metal-to-insulator transition, two-dimensional monolayer, ferromagnetic material

Abstract:

Key words: metal-to-insulator transition, two-dimensional monolayer, ferromagnetic material

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

73.22.-f (Electronic structure of nanoscale materials and related systems) 76.50.+g (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)

齐灿, 胡军. Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate[J]. 中国物理B, 2018, 27(7): 77106-077106.

Can Qi(齐灿), Jun Hu(胡军). Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate[J]. Chin. Phys. B, 2018, 27(7): 77106-077106.

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Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

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