Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

doi:10.1088/1674-1056/26/12/128101

中国物理B ›› 2017, Vol. 26 ›› Issue (12): 128101-128101.doi: 10.1088/1674-1056/26/12/128101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘)

Department of Microelectronics, Soochow University, Suzhou 215006, China

收稿日期:2017-07-11 修回日期:2017-08-22 出版日期:2017-12-05 发布日期:2017-12-05
通讯作者: Ming-Xiang Wang E-mail:mingxiang_wang@suda.edu.cn
基金资助:
Project supported by the Science and Technology Program of Suzhou City, China (Grant No. SYG201538) and the National Natural Science Foundation of China (Grant No. 61574096).

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘)

Department of Microelectronics, Soochow University, Suzhou 215006, China

Received:2017-07-11 Revised:2017-08-22 Online:2017-12-05 Published:2017-12-05
Contact: Ming-Xiang Wang E-mail:mingxiang_wang@suda.edu.cn
Supported by:
Project supported by the Science and Technology Program of Suzhou City, China (Grant No. SYG201538) and the National Natural Science Foundation of China (Grant No. 61574096).

摘要/Abstract

摘要： Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device (L=2 μm). It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

关键词: amorphous indium-gallium-zinc oxide, thin film transistors, positive bias stress, hump

Abstract: Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device (L=2 μm). It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

Key words: amorphous indium-gallium-zinc oxide, thin film transistors, positive bias stress, hump

中图分类号: (Amorphous semiconductors)

81.05.Gc

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

齐栋宇, 张冬利, 王明湘. Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors[J]. 中国物理B, 2017, 26(12): 128101-128101.

Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘). Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors[J]. Chin. Phys. B, 2017, 26(12): 128101-128101.

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Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

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