中国物理B ›› 2017, Vol. 26 ›› Issue (12): 128102-128102.doi: 10.1088/1674-1056/26/12/128102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition

He-Ju Xu(许贺菊), Jian-Song Mi(米建松), Yun Li(李云), Bin Zhang(张彬), Ri-Dong Cong(丛日东), Guang-Sheng Fu(傅广生), Wei Yu(于威)   

  1. 1. College of Physics Science and Technology, Hebei University, Baoding 071002, China;
    2. College of science, North China University of Science and Technology, Tangshan 063009, China
  • 收稿日期:2017-06-07 修回日期:2017-08-27 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: Ri-Dong Cong, Guang-Sheng Fu, Guang-Sheng Fu E-mail:congrd@hbu.edu.cn;fugs@hbu.cn;fugs@hbu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China for Youths (Grant No. 61504036), the Natural Science Foundation of Hebei Province for Youths, China (Grant No. A2016201087), the Doctoral Fund of the Ministry of Education of China (Grant No. 20131301120003), and the Science and Technology Project of Hebei Province, China (Grant No. 13214315).

Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition

He-Ju Xu(许贺菊)1,2, Jian-Song Mi(米建松)1, Yun Li(李云)1, Bin Zhang(张彬)1, Ri-Dong Cong(丛日东)1, Guang-Sheng Fu(傅广生)1, Wei Yu(于威)1   

  1. 1. College of Physics Science and Technology, Hebei University, Baoding 071002, China;
    2. College of science, North China University of Science and Technology, Tangshan 063009, China
  • Received:2017-06-07 Revised:2017-08-27 Online:2017-12-05 Published:2017-12-05
  • Contact: Ri-Dong Cong, Guang-Sheng Fu, Guang-Sheng Fu E-mail:congrd@hbu.edu.cn;fugs@hbu.cn;fugs@hbu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China for Youths (Grant No. 61504036), the Natural Science Foundation of Hebei Province for Youths, China (Grant No. A2016201087), the Doctoral Fund of the Ministry of Education of China (Grant No. 20131301120003), and the Science and Technology Project of Hebei Province, China (Grant No. 13214315).

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摘要：

We study the nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition (CVD) on SiO2/Si substrates with using S and MoO3 powders. The MoS2 flake is of monolayer with triangular nucleation, which might arise from the initial MoO3-x that is deposited on the substrate, and then bonded with S to form MoS2 flake. The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed. After that, the morphology of MoS2 flake evolves from triangle to similar hexagon, then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment. The nucleation density does not increase linearly with the increase of reactant concentration, which could be explained by the two-dimensional nucleation theory.

关键词: MoS2, chemical vapor deposition, morphology, nucleation

Abstract:

We study the nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition (CVD) on SiO2/Si substrates with using S and MoO3 powders. The MoS2 flake is of monolayer with triangular nucleation, which might arise from the initial MoO3-x that is deposited on the substrate, and then bonded with S to form MoS2 flake. The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed. After that, the morphology of MoS2 flake evolves from triangle to similar hexagon, then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment. The nucleation density does not increase linearly with the increase of reactant concentration, which could be explained by the two-dimensional nucleation theory.

Key words: MoS2, chemical vapor deposition, morphology, nucleation

中图分类号:  (Nanocrystalline materials)

  • 81.07.Bc
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)