中国物理B ›› 2017, Vol. 26 ›› Issue (12): 126801-126801.doi: 10.1088/1674-1056/26/12/126801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing

Yu Wang(汪煜), Meng Yang(杨濛), Gang Wang(王刚), Xiao-Xu Wei(魏晓旭), Jun-Zhuan Wang(王军转), Yun Li(李昀), Ze-Wen Zou(左则文), You-Dou Zheng(郑有炓), Yi Shi(施毅)   

  1. 1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2. College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China
  • 收稿日期:2017-08-18 修回日期:2017-08-31 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: Yi Shi E-mail:yshi@nju.edu.cn

Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing

Yu Wang(汪煜)1, Meng Yang(杨濛)1, Gang Wang(王刚)1, Xiao-Xu Wei(魏晓旭)1, Jun-Zhuan Wang(王军转)1, Yun Li(李昀)1, Ze-Wen Zou(左则文)2, You-Dou Zheng(郑有炓)1, Yi Shi(施毅)1   

  1. 1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2. College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China
  • Received:2017-08-18 Revised:2017-08-31 Online:2017-12-05 Published:2017-12-05
  • Contact: Yi Shi E-mail:yshi@nju.edu.cn

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摘要： Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature (Ta) is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals (NCs) with the core-shell structure form in the films. After being annealed at 1000℃ (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

关键词: Si1-xGex, annealing, segregation, desorption

Abstract: Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature (Ta) is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals (NCs) with the core-shell structure form in the films. After being annealed at 1000℃ (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

Key words: Si1-xGex, annealing, segregation, desorption

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth)