中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88702-088702.doi: 10.1088/1674-1056/26/8/088702

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

Jian-Xing Xu(徐建星), Jin-Lun Li(李金伦), Si-Hang Wei(魏思航), Ben Ma(马奔), Yi Zhang(张翼), Yu Zhang(张宇), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Daheng New Epock Technology Inc., Beijing 100085, China
  • 收稿日期:2017-02-26 修回日期:2017-04-12 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Hai-Qiao Ni E-mail:nihq@semi.ac.cn
  • 基金资助:

    Project supported by the National Instrument Program of China (Grant No. 2012YQ140005), the National Key Basic Research Program of China (Grant Nos. 2013CB932904 and 2016YFB0402403), and the National Natural Science Foundation of China (Grant Nos. 61274125 and 61435012).

Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

Jian-Xing Xu(徐建星)1,2, Jin-Lun Li(李金伦)1, Si-Hang Wei(魏思航)1,2, Ben Ma(马奔)1,2, Yi Zhang(张翼)3, Yu Zhang(张宇)1,2, Hai-Qiao Ni(倪海桥)1,2, Zhi-Chuan Niu(牛智川)1,2   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Daheng New Epock Technology Inc., Beijing 100085, China
  • Received:2017-02-26 Revised:2017-04-12 Online:2017-08-05 Published:2017-08-05
  • Contact: Hai-Qiao Ni E-mail:nihq@semi.ac.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Instrument Program of China (Grant No. 2012YQ140005), the National Key Basic Research Program of China (Grant Nos. 2013CB932904 and 2016YFB0402403), and the National Natural Science Foundation of China (Grant Nos. 61274125 and 61435012).

摘要:

A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure (MLHS) terahertz photoconductive antenna (PCA) at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAlAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.

关键词: THz, InGaAs/InAlAs MLHS, photoconductive antenna

Abstract:

A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure (MLHS) terahertz photoconductive antenna (PCA) at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAlAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.

Key words: THz, InGaAs/InAlAs MLHS, photoconductive antenna

中图分类号:  (Millimeter/terahertz fields effects)

  • 87.50.U
73.21.Cd (Superlattices) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)