中国物理B ›› 2017, Vol. 26 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/26/7/078102
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国)
Zesheng Ji(吉泽生)1, Lianshan Wang(汪连山)1,2, Guijuan Zhao(赵桂娟)1, Yulin Meng(孟钰淋)1, Fangzheng Li(李方政)1, Huijie Li(李辉杰)1, Shaoyan Yang(杨少延)1, Zhanguo Wang(王占国)1
摘要: We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.
中图分类号: (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)