中国物理B ›› 2017, Vol. 26 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/26/7/078102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国)   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-01-26 修回日期:2017-03-17 出版日期:2017-07-05 发布日期:2017-07-05
  • 通讯作者: Lianshan Wang E-mail:ls-wang@semi.ac.cn
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No.2015AA016801) and Guangdong Provincial Scientific and Technologic Planning Program,China (Grant No.2014B010119002).

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Zesheng Ji(吉泽生)1, Lianshan Wang(汪连山)1,2, Guijuan Zhao(赵桂娟)1, Yulin Meng(孟钰淋)1, Fangzheng Li(李方政)1, Huijie Li(李辉杰)1, Shaoyan Yang(杨少延)1, Zhanguo Wang(王占国)1   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-01-26 Revised:2017-03-17 Online:2017-07-05 Published:2017-07-05
  • Contact: Lianshan Wang E-mail:ls-wang@semi.ac.cn
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No.2015AA016801) and Guangdong Provincial Scientific and Technologic Planning Program,China (Grant No.2014B010119002).

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摘要： We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.

关键词: pulsed metal organic chemical vapor deposition, growth mode, morphology, crystalline quality

Abstract: We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.

Key words: pulsed metal organic chemical vapor deposition, growth mode, morphology, crystalline quality

中图分类号:  (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

  • 81.10.-h
81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)