中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/25/10/108501
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉)
Shu-Xiang Sun(孙树祥)1, Hui-Fang Ji(吉慧芳)1, Hui-Juan Yao(姚会娟)1, Sheng Li(李胜)1, Zhi Jin(金智)2, Peng Ding(丁芃)2, Ying-Hui Zhong(钟英辉)1
摘要:
Direct current (DC) and radio frequency (RF) performances of InP-based high electron mobility transistors (HEMTs) are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley-Read-Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover, the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency (fmax) of 385 GHz.
中图分类号: (Semiconductor-device characterization, design, and modeling)