中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/25/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs

Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉)   

  1. 1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2016-05-25 修回日期:2016-06-24 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404115 and 61434006), the Postdoctoral Science Foundation of Henan Province, China (Grant No. 2014006), and the Development Fund for Outstanding Young Teachers of Zhengzhou University (Grant No. 1521317004).

Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs

Shu-Xiang Sun(孙树祥)1, Hui-Fang Ji(吉慧芳)1, Hui-Juan Yao(姚会娟)1, Sheng Li(李胜)1, Zhi Jin(金智)2, Peng Ding(丁芃)2, Ying-Hui Zhong(钟英辉)1   

  1. 1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2016-05-25 Revised:2016-06-24 Online:2016-10-05 Published:2016-10-05
  • Contact: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404115 and 61434006), the Postdoctoral Science Foundation of Henan Province, China (Grant No. 2014006), and the Development Fund for Outstanding Young Teachers of Zhengzhou University (Grant No. 1521317004).

RichHTML

0

PDF (PC)

831

赞

摘要：

Direct current (DC) and radio frequency (RF) performances of InP-based high electron mobility transistors (HEMTs) are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley-Read-Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover, the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency (fmax) of 385 GHz.

关键词: InP-based HEMT, hydrodynamic model, the current gain cutoff frequency (fT), the maximum oscillation frequency (fmax)

Abstract:

Direct current (DC) and radio frequency (RF) performances of InP-based high electron mobility transistors (HEMTs) are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley-Read-Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover, the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency (fmax) of 385 GHz.

Key words: InP-based HEMT, hydrodynamic model, the current gain cutoff frequency (fT), the maximum oscillation frequency (fmax)

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
73.61.Ey (III-V semiconductors)