Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
孙树祥, 吉慧芳, 姚会娟, 李胜, 金智, 丁芃, 钟英辉
Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉)
中国物理B
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2016, (10): 108501
-108501
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DOI: 10.1088/1674-1056/25/10/108501