中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107803-107803.doi: 10.1088/1674-1056/25/10/107803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

Liang Qiao(乔良), Zi-Guang Ma(马紫光), Hong Chen(陈弘), Hai-Yan Wu(吴海燕), Xue-Fang Chen(陈雪芳), Hao-Jun Yang(杨浩军), Bin Zhao(赵斌), Miao He(何苗), Shu-Wen Zheng(郑树文), Shu-Ti Li(李述体)   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    2 Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 College of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • 收稿日期:2016-04-21 修回日期:2016-06-25 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Hong Chen, Miao He E-mail:hchen@aphy.iphy.ac.cn;herofate@126.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204360 and 61210014), the Science and Technology Planning Projects of Guangdong Province, China (Grant Nos. 2014B050505020, 2015B010114007, and 2014B090904045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20134407110008), the Guangzhou Municipal Science and Technology Project of Guangdong Province, China (Grant No. 2016201604030027), and the Zhongshan Science and Technology Project of Guangdong Province, China (Grant No. 2013B3FC0003).

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

Liang Qiao(乔良)1,2, Zi-Guang Ma(马紫光)2, Hong Chen(陈弘)2, Hai-Yan Wu(吴海燕)2, Xue-Fang Chen(陈雪芳)1,2, Hao-Jun Yang(杨浩军)2, Bin Zhao(赵斌)2, Miao He(何苗)1,3, Shu-Wen Zheng(郑树文)1, Shu-Ti Li(李述体)1   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    2 Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 College of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2016-04-21 Revised:2016-06-25 Online:2016-10-05 Published:2016-10-05
  • Contact: Hong Chen, Miao He E-mail:hchen@aphy.iphy.ac.cn;herofate@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204360 and 61210014), the Science and Technology Planning Projects of Guangdong Province, China (Grant Nos. 2014B050505020, 2015B010114007, and 2014B090904045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20134407110008), the Guangzhou Municipal Science and Technology Project of Guangdong Province, China (Grant No. 2016201604030027), and the Zhongshan Science and Technology Project of Guangdong Province, China (Grant No. 2013B3FC0003).

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摘要： In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.

关键词: TMIn-treatment, InGaN/GaN quantum well, green LED

Abstract: In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.

Key words: TMIn-treatment, InGaN/GaN quantum well, green LED

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
78.67.De (Quantum wells) 85.60.Jb (Light-emitting devices)