中国物理B ›› 2016, Vol. 25 ›› Issue (9): 98402-098402.doi: 10.1088/1674-1056/25/9/098402
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Ming Lu(鲁明), Jing Xu(徐晶), Jian-Wei Huang(黄建微)
Ming Lu(鲁明)1, Jing Xu(徐晶)1, Jian-Wei Huang(黄建微)2
摘要: The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data.
中图分类号: (Photoelectric conversion)