中国物理B ›› 2016, Vol. 25 ›› Issue (7): 77801-077801.doi: 10.1088/1674-1056/25/7/077801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Thermally induced native defect transform in annealed GaSb

Jie Su(苏杰), Tong Liu(刘彤), Jing-Ming Liu(刘京明), Jun Yang(杨俊), Yong-Biao Bai(白永彪), Gui-Ying Shen(沈桂英), Zhi-Yuan Dong(董志远), Fang-Fang Wang(王芳芳), You-Wen Zhao(赵有文)   

  1. 1 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 收稿日期:2015-12-16 修回日期:2016-03-14 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: You-Wen Zhao E-mail:zhaoyw@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

Thermally induced native defect transform in annealed GaSb

Jie Su(苏杰)1,2, Tong Liu(刘彤)1, Jing-Ming Liu(刘京明)1, Jun Yang(杨俊)1, Yong-Biao Bai(白永彪)1,2, Gui-Ying Shen(沈桂英)1,2, Zhi-Yuan Dong(董志远)1, Fang-Fang Wang(王芳芳)3, You-Wen Zhao(赵有文)1   

  1. 1 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2015-12-16 Revised:2016-03-14 Online:2016-07-05 Published:2016-07-05
  • Contact: You-Wen Zhao E-mail:zhaoyw@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

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摘要： Undoped p-type GaSb single crystals were annealed at 550-600 ℃ for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.

关键词: GaSb, annealing, defect, Hall effect measurement

Abstract: Undoped p-type GaSb single crystals were annealed at 550-600 ℃ for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.

Key words: GaSb, annealing, defect, Hall effect measurement

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 91.60.Ed (Crystal structure and defects, microstructure) 78.55.-m (Photoluminescence, properties and materials)