Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

doi:10.1088/1674-1056/24/11/116803

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 116803-116803.doi: 10.1088/1674-1056/24/11/116803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-04-20 修回日期:2015-08-19 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-04-20 Revised:2015-08-19 Online:2015-11-05 Published:2015-11-05
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

摘要/Abstract

摘要： Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic contact to p-GaN. The growth conditions of the compound contact layer and its effect on the performance of Ni/Au Ohmic contact to p-GaN are investigated. It is confirmed that the specific contact resistivity can be lowered nearly two orders by optimizing the growth conditions of compound contact layer. When the flow rate ratio between Mg and Ga gas sources of p⁺⁺-InGaN layer is 10.6% and the thickness of p⁺⁺-InGaN layer is 3 nm, the lowest specific contact resistivity of 3.98×10^-5Ω·cm² is achieved. In addition, the experimental results indicate that the specific contact resistivity can be further lowered to 1.07×10^-7Ω ·cm² by optimizing the alloying annealing temperature to 520 ℃.

关键词: Ohmic contact, growth conditions, compound contact layer, tunneling

Abstract: Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic contact to p-GaN. The growth conditions of the compound contact layer and its effect on the performance of Ni/Au Ohmic contact to p-GaN are investigated. It is confirmed that the specific contact resistivity can be lowered nearly two orders by optimizing the growth conditions of compound contact layer. When the flow rate ratio between Mg and Ga gas sources of p⁺⁺-InGaN layer is 10.6% and the thickness of p⁺⁺-InGaN layer is 3 nm, the lowest specific contact resistivity of 3.98×10^-5Ω·cm² is achieved. In addition, the experimental results indicate that the specific contact resistivity can be further lowered to 1.07×10^-7Ω ·cm² by optimizing the alloying annealing temperature to 520 ℃.

Key words: Ohmic contact, growth conditions, compound contact layer, tunneling

中图分类号: (Surface and interface dynamics and vibrations)

68.35.Ja

61.72.uj (III-V and II-VI semiconductors) 61.82.Bg (Metals and alloys) 67.25.bh (Films and restricted geometries)

李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光. Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer[J]. 中国物理B, 2015, 24(11): 116803-116803.

Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光). Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer[J]. Chin. Phys. B, 2015, 24(11): 116803-116803.

参考文献 20

[1]	LinY J;2005 Appl. Phys. Lett. 86 122109
[2]	Nakamura S and Fasol G 1997 The Blue Laser Diode
[3]	Luther B P, Mohney S E, Jackson T N, Asif K M, Chen Q and Yang J W;1997 Appl. Phys. Lett. 70 57
[4]	Song J O, KimS H, Kwak J S and Seong T Y;2003 Appl. Phys. Lett. 83 1154
[5]	Huang Y P, Yun F, Ding W, Wang Y, Wang H, Zhao Y K, Zhang Y, Guo M F, Hou X and L S;2014 Acta. Phys. Sin. 63 127302 (in Chinese)
[6]	Narayan J, Wang H, Oh T H, Choi H K and Fan J C C;2002 Appl. Phys. Lett. 81 3978
[7]	Kim H K, Seong T Y, Adesida I, Tang C W and Lau K M;2004 Appl. Phys. Lett. 84 1710
[8]	Li T, Qin Z X, Xu Z Y, Shen B and Zhang G Y;2011 Chin. Phys. B 20 046101
[9]	Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S and Holtz M;2009 J. Electron. Mater. 38 545
[10]	Greco G, Prystawko P, Leszczynński M, Nigro R L, Raineri V and Roccaforte F;2011 J. Appl. Phys. 110 123703
[11]	Sun J, Rickert K A, Redwing J M, Ellis A B, Himpsel F J and Kuech T F;2000 Appl. Phys. Lett. 76 415
[12]	Gessmann T, Li Y L, Waldron E L, Graff J W, Schubert E F and Sheu J K;2002 Appl. Phys. Lett. 80 986
[13]	Jang J S and Seong T Y;2007 J. Appl. Phys. 101 013711
[14]	Jang J S, Sohn S J, Kim D and Seong T Y;2006 Semicond. Sci. Technol. 21 L37
[15]	Kwak J S;2004 J. Appl. Phys. 95 5917
[16]	Park Y and Kim H;2011 Appl. Phys. Express. 4 085701
[17]	Wu L L, Zhao D G, Jiang D S, Chen P, Le L C, Li L, Liu Z S, Zhang S M, Zhu J J, Wang H, Zhang B S and Yang H;2013 Semicond. Sci. Technol. 28 105020
[18]	Pettersen S V, Grande A P, Tybell T, Riechert H, Averbeck R and Grepstad J K;2007 Semicond. Sci. Technol. 22 186
[19]	Dai C C, Liu X C, Zhou T Y, Zhuo S Y, Shi B and Shi E W;2014 Chin. Phys. B 23 066803
[20]	Li X J, Zhao D G, Jiang D S, Liu Z S, Chen P, Zhu J J, Le L C, Yang J, He X G, Zhang S M, Zhang B S, Liu J P and Yang H;2014 J. Appl. Phys. 116 163708

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

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