Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer
李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光
Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer
Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光)
中国物理B
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2015, (11): 116803
-116803
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DOI: 10.1088/1674-1056/24/11/116803