中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67804-067804.doi: 10.1088/1674-1056/24/6/067804

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇    下一篇

Status of GaN-based green light-emitting diodes

刘军林, 张建立, 王光绪, 莫春兰, 徐龙权, 丁杰, 全知觉, 王小兰, 潘拴, 郑畅达, 吴小明, 方文卿, 江风益   

  1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China
  • 收稿日期:2015-01-20 修回日期:2015-02-05 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:

    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334001), the National Natural Science Foundation of China (Grant Nos. 11364034 and 21405076), the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE32B01), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Status of GaN-based green light-emitting diodes

Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益)   

  1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China
  • Received:2015-01-20 Revised:2015-02-05 Online:2015-06-05 Published:2015-06-05
  • Contact: Zhang Jian-Li E-mail:Zhangjianli@ncu.edu.cn
  • About author:78.66.Fd; 73.40.Kp
  • Supported by:

    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334001), the National Natural Science Foundation of China (Grant Nos. 11364034 and 21405076), the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE32B01), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

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摘要：

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

关键词: silicon substrate, GaN, green LED

Abstract:

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

Key words: silicon substrate, GaN, green LED

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)