›› 2015, Vol. 24 ›› Issue (2): 28102-028102.doi: 10.1088/1674-1056/24/2/028102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Influence of substrate bias voltage on the microstructure of nc-SiOx:H film

李慧敏, 于威, 徐艳梅, 季云, 蒋昭毅, 王新占, 李晓苇, 傅广生   

  1. Hebei Key Laboratory of Optic-electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2014-07-27 修回日期:2014-08-26 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the Key Basic Research Project of Hebei Province, China (Grant No. 12963930D), the Natural Science Foundation of Hebei Province, China (Grant No. F2013201250), and the Science and Technology Research Projects of the Educational Department of Hebei Province, China (Grant No. ZH2012030).

Influence of substrate bias voltage on the microstructure of nc-SiOx:H film

Li Hui-Min (李慧敏), Yu Wei (于威), Xu Yan-Mei (徐艳梅), Ji Yun (季云), Jiang Zhao-Yi (蒋昭毅), Wang Xin-Zhan (王新占), Li Xiao-Wei (李晓苇), Fu Guang-Sheng (傅广生)   

  1. Hebei Key Laboratory of Optic-electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • Received:2014-07-27 Revised:2014-08-26 Online:2015-02-05 Published:2015-02-05
  • Contact: Yu Wei, Li Xiao-Wei E-mail:yuwei@hub.edu.cn;laser@hbu.edu.cn
  • Supported by:
    Project supported by the Key Basic Research Project of Hebei Province, China (Grant No. 12963930D), the Natural Science Foundation of Hebei Province, China (Grant No. F2013201250), and the Science and Technology Research Projects of the Educational Department of Hebei Province, China (Grant No. ZH2012030).

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摘要： Amorphous silicon oxide containing nanocrystalline silicon grain (nc-SiOx:H) films are prepared by a plasma-enhanced chemical vapor deposition technique at different negative substrate bias voltages. The influence of the bias voltage applied to the substrate on the microstructure is investigated. The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si. The grain size can be well controlled by varying the substrate bias voltage, and the largest size is obtained at 60 V. Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiOx:H films suggest that the absorption peak intensities, which are related to the defect densities, can be well controlled. It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process, which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds. Also the larger grain size and lower band gap, which will result in better photosensitivity, can also be obtained with a moderate substrate bias voltage of 60 V.

关键词: nc-SiOx:H, microstructure, substrate bias voltage

Abstract: Amorphous silicon oxide containing nanocrystalline silicon grain (nc-SiOx:H) films are prepared by a plasma-enhanced chemical vapor deposition technique at different negative substrate bias voltages. The influence of the bias voltage applied to the substrate on the microstructure is investigated. The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si. The grain size can be well controlled by varying the substrate bias voltage, and the largest size is obtained at 60 V. Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiOx:H films suggest that the absorption peak intensities, which are related to the defect densities, can be well controlled. It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process, which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds. Also the larger grain size and lower band gap, which will result in better photosensitivity, can also be obtained with a moderate substrate bias voltage of 60 V.

Key words: nc-SiOx:H, microstructure, substrate bias voltage

中图分类号:  (Nanocrystalline materials)

  • 81.07.Bc
78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))