›› 2015, Vol. 24 ›› Issue (2): 27305-027305.doi: 10.1088/1674-1056/24/2/027305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

唐欣月a, 高红a, 武立立b, 温静a, 潘思明a, 刘欣a, 张喜田a   

  1. a Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;
    b Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, China
  • 收稿日期:2014-07-07 修回日期:2014-08-18 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172058), the Key Project of the Science Technology and Research Project of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Natural Science Foundation of Heilongjiang Province for Returned Chinese Scholars, China (Grant No. LC2013C17).

Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

Tang Xin-Yue (唐欣月)a, Gao Hong (高红)a, Wu Li-Li (武立立)b, Wen Jing (温静)a, Pan Si-Ming (潘思明)a, Liu Xin (刘欣)a, Zhang Xi-Tian (张喜田)a   

  1. a Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;
    b Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, China
  • Received:2014-07-07 Revised:2014-08-18 Online:2015-02-05 Published:2015-02-05
  • Contact: Gao Hong, Zhang Xi-Tian E-mail:gaohong65cn@126.com;xtzhangzhang@hotmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172058), the Key Project of the Science Technology and Research Project of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Natural Science Foundation of Heilongjiang Province for Returned Chinese Scholars, China (Grant No. LC2013C17).

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摘要： One-dimensional (1D) In2O3(ZnO)m superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In2O3(ZnO)m superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm-1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.

关键词: In2O3(ZnO)m, superlattice, electrical properties

Abstract: One-dimensional (1D) In2O3(ZnO)m superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In2O3(ZnO)m superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm-1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.

Key words: In2O3(ZnO)m, superlattice, electrical properties

中图分类号:  (Quantum wires)

  • 73.63.Nm
81.05.Dz (II-VI semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))