›› 2015, Vol. 24 ›› Issue (2): 24219-024219.doi: 10.1088/1674-1056/24/2/024219

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

王强a b, 冀子武a, 王帆a, 牟奇a, 郑雨军a, 徐现刚c, 吕元杰d, 冯志红d   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b School of Science, Qilu University of Technology, Jinan 250353, China;
    c State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
    d National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 收稿日期:2014-06-09 修回日期:2014-08-24 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education) (Grant No. JG1401), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the National Natural Science Foundation of China (Grant No. 61306113).

Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

Wang Qiang (王强)a b, Ji Zi-Wu (冀子武)a, Wang Fan (王帆)a, Mu Qi (牟奇)a, Zheng Yu-Jun (郑雨军)a, Xu Xian-Gang (徐现刚)c, Lü Yuan-Jie (吕元杰)d, Feng Zhi-Hong (冯志红)d   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b School of Science, Qilu University of Technology, Jinan 250353, China;
    c State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
    d National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • Received:2014-06-09 Revised:2014-08-24 Online:2015-02-05 Published:2015-02-05
  • Contact: Ji Zi-Wu E-mail:jiziwu@sdu.edu.cn
  • Supported by:
    Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education) (Grant No. JG1401), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the National Natural Science Foundation of China (Grant No. 61306113).

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摘要： The photoluminescence (PL) properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots (QDs) and an InGaN matrix in the InGaN epilayer are investigated. The excitation power dependences of QD-related green emissions (PD) and matrix-related blue emissions (PM) in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both PM and PD are dominated by the combined action of Coulomb screening and localized state filling effect. However, at 300 K, PM is dominated by the non-radiative recombination of the carriers in the InGaN matrix, while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunnelling. This is consistent with the excitation power dependence of the PL efficiency for the emission.

关键词: photoluminescence, InGaN quantum wells, phase separation

Abstract: The photoluminescence (PL) properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots (QDs) and an InGaN matrix in the InGaN epilayer are investigated. The excitation power dependences of QD-related green emissions (PD) and matrix-related blue emissions (PM) in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both PM and PD are dominated by the combined action of Coulomb screening and localized state filling effect. However, at 300 K, PM is dominated by the non-radiative recombination of the carriers in the InGaN matrix, while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunnelling. This is consistent with the excitation power dependence of the PL efficiency for the emission.

Key words: photoluminescence, InGaN quantum wells, phase separation

中图分类号:  (Optical materials)

  • 42.70.-a
78.67.De (Quantum wells) 78.66.Fd (III-V semiconductors)