Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

doi:10.1088/1674-1056/23/11/117702

›› 2014, Vol. 23 ›› Issue (11): 117702-117702.doi: 10.1088/1674-1056/23/11/117702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack

韩锴^a, 王晓磊^b, 徐永贵^a, 杨红^b, 王文武^b

a Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;
b Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2014-04-03 修回日期:2014-05-28 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Natural Science of China (Grant Nos. 61176091 and 50932001).

Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack

Han Kai (韩锴)^a, Wang Xiao-Lei (王晓磊)^b, Xu Yong-Gui (徐永贵)^a, Yang Hong (杨红)^b, Wang Wen-Wu (王文武)^b

a Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;
b Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2014-04-03 Revised:2014-05-28 Online:2014-11-15 Published:2014-11-15
Contact: Han Kai E-mail:hankai@wfu.edu.cn
Supported by:
Project supported by the National Natural Science of China (Grant Nos. 61176091 and 50932001).

摘要/Abstract

摘要： A theoretical model of flatband voltage (V_FB) of metal/high-k/SiO₂/Si stack is proposed based on band alignment of entire gate stack, i.e., the V_FB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO₂ and SiO₂/Si interfaces, and their interactions. Then the V_FB of TiN/HfO₂/SiO₂/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive V_FB shift of TiN/HfO₂/SiO₂/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO₂ and HfO₂/SiO₂ interfaces.

关键词: metal gate, high-k dielectric, band alignment, V_fb shift

Abstract: A theoretical model of flatband voltage (V_FB) of metal/high-k/SiO₂/Si stack is proposed based on band alignment of entire gate stack, i.e., the V_FB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO₂ and SiO₂/Si interfaces, and their interactions. Then the V_FB of TiN/HfO₂/SiO₂/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive V_FB shift of TiN/HfO₂/SiO₂/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO₂ and HfO₂/SiO₂ interfaces.

Key words: metal gate, high-k dielectric, band alignment, V_fb shift

中图分类号:

77.55.D-

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.20.At (Surface states, band structure, electron density of states)

韩锴, 王晓磊, 徐永贵, 杨红, 王文武. Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack[J]. , 2014, 23(11): 117702-117702.

Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武). Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack[J]. Chin. Phys. B, 2014, 23(11): 117702-117702.

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Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack

Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack

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