Analysis of flatband voltage shift of metal/high- k/SiO 2/Si stack based on energy band alignment of entire gate stack
韩锴, 王晓磊, 徐永贵, 杨红, 王文武
Analysis of flatband voltage shift of metal/high- k/SiO 2/Si stack based on energy band alignment of entire gate stack
Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武)
Chin. Phys. B . 2014, (11): 117702 -117702 .  DOI: 10.1088/1674-1056/23/11/117702