中国物理B ›› 2014, Vol. 23 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/23/8/088502
• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇 下一篇
何敖东a b, 刘波a, 宋志棠a, 王良咏a, 刘卫丽a, 冯高明c, 封松林a
He Ao-Dong (何敖东)a b, Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Wang Liang-Yong (王良咏)a, Liu Wei-Li (刘卫丽)a, Feng Gao-Ming (冯高明)c, Feng Song-Lin (封松林)a
摘要: In the paper, chemical mechanical planarization (CMP) of Ge2Sb2Te5 (GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope (OM) and scanning electron microscope (SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.
中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)