Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

doi:10.1088/1674-1056/23/8/088107

›› 2014, Vol. 23 ›› Issue (8): 88107-088107.doi: 10.1088/1674-1056/23/8/088107

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

王昊, 韩伟华, 马刘红, 李小明, 杨富华

Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-09-04 修回日期:2014-02-17 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported partly by the National Basic Research Program of China (Grant No. 2010CB934104) and the National Natural Science Foundation of China (Grant Nos. 61376069 and 61327813).

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华)

Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-09-04 Revised:2014-02-17 Online:2014-08-15 Published:2014-08-15
Contact: Han Wei-Hua E-mail:weihua@semi.ac.cn
Supported by:
Project supported partly by the National Basic Research Program of China (Grant No. 2010CB934104) and the National Natural Science Foundation of China (Grant Nos. 61376069 and 61327813).

摘要/Abstract

摘要： Single and multiple n-channel junctionless nanowire transistors (JNTs) are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures (10 K-100 K) and variable drain bias voltages (10 mV-90 mV). Transfer characteristics exhibit current oscillation peaks below flat-band voltage (V_FB) at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional (1D) channel of silicon nanowires. However, at higher voltages than V_FB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.

关键词: junctionless nanowire transistors (JNT), quantum transport, current oscillations, low temperatures

Abstract: Single and multiple n-channel junctionless nanowire transistors (JNTs) are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures (10 K-100 K) and variable drain bias voltages (10 mV-90 mV). Transfer characteristics exhibit current oscillation peaks below flat-band voltage (V_FB) at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional (1D) channel of silicon nanowires. However, at higher voltages than V_FB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.

Key words: junctionless nanowire transistors (JNT), quantum transport, current oscillations, low temperatures

中图分类号: (Nanowires)

81.07.Gf

85.30.Tv (Field effect devices) 73.63.Hs (Quantum wells) 07.20.Mc (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)

王昊, 韩伟华, 马刘红, 李小明, 杨富华. Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures[J]. , 2014, 23(8): 88107-088107.

Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华). Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures[J]. Chin. Phys. B, 2014, 23(8): 88107-088107.

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Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

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