中国物理B ›› 2018, Vol. 27 ›› Issue (8): 88106-088106.doi: 10.1088/1674-1056/27/8/088106
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华)
Liu-Hong Ma(马刘红)1,3, Wei-Hua Han(韩伟华)2,3, Xiao-Song Zhao(赵晓松)2,3, Yang-Yan Guo(郭仰岩)2,3, Ya-Mei Dou(窦亚梅)2,3, Fu-Hua Yang(杨富华)3,4
摘要: We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus-doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.
中图分类号: (Nanowires)