›› 2014, Vol. 23 ›› Issue (8): 87804-087804.doi: 10.1088/1674-1056/23/8/087804
• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇 下一篇
李俊焘a b, 刘波a, 宋志棠a, 任堃a b, 朱敏a b, 徐佳c, 任佳栋c, 冯高明c, 任万春c, 童浩c
Li Jun-Tao (李俊焘)a b, Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Ren Kun (任堃)a b, Zhu Min (朱敏)a b, Xu Jia (徐佳)c, Ren Jia-Dong (任佳栋)c, Feng Gao-Ming (冯高明)c, Ren Wan-Chun (任万春)c, Tong Hao (童浩)c
摘要: In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.
中图分类号: (Amorphous semiconductors; glasses)