中国物理B ›› 2014, Vol. 23 ›› Issue (8): 87810-087810.doi: 10.1088/1674-1056/23/8/087810

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

王维颖, 金鹏, 刘贵鹏, 李维, 刘斌, 刘兴昉, 王占国   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2014-02-13 修回日期:2014-04-04 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and 863 Program of China (Grant No. 2011AA03A101).

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

Wang Wei-Ying (王维颖), Jin Peng (金鹏), Liu Gui-Peng (刘贵鹏), Li Wei (李维), Liu Bin (刘斌), Liu Xing-Fang (刘兴昉), Wang Zhan-Guo (王占国)   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2014-02-13 Revised:2014-04-04 Online:2014-08-15 Published:2014-08-15
  • Contact: Jin Peng E-mail:pengjin@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and 863 Program of China (Grant No. 2011AA03A101).

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摘要： The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ～ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL-Om N complex in the AlN material.

关键词: high-temperature annealing, AlN, optical properties

Abstract: The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ～ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL-Om N complex in the AlN material.

Key words: high-temperature annealing, AlN, optical properties

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
81.40.Tv (Optical and dielectric properties related to treatment conditions) 81.40.-z (Treatment of materials and its effects on microstructure, nanostructure, And properties)