中国物理B ›› 2014, Vol. 23 ›› Issue (8): 87810-087810.doi: 10.1088/1674-1056/23/8/087810
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
王维颖, 金鹏, 刘贵鹏, 李维, 刘斌, 刘兴昉, 王占国
Wang Wei-Ying (王维颖), Jin Peng (金鹏), Liu Gui-Peng (刘贵鹏), Li Wei (李维), Liu Bin (刘斌), Liu Xing-Fang (刘兴昉), Wang Zhan-Guo (王占国)
摘要: The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL-Om N complex in the AlN material.
中图分类号: (III-V semiconductors)