中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57803-057803.doi: 10.1088/1674-1056/23/5/057803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of thermal annealing on the properties of N-implanted ZnS films

薛书文, 张军, 全军   

  1. Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China
  • 收稿日期:2013-08-30 修回日期:2013-11-16 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11304276), the Natural Science Foundation of Guangdong Province of China (Grant No. S2013010014965), the Cultivation of Innovative Talents of the Colleges and Universities of Guangdong Province of China (Grant No. LYM10098), the China Postdoctoral Science Foundation (Grant No. 20090461331), and the Natural Science Foundation of Zhanjiang Normal College, China (Grant No. ZL1005).

Effects of thermal annealing on the properties of N-implanted ZnS films

Xue Shu-Wen (薛书文), Zhang Jun (张军), Quan Jun (全军)   

  1. Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China
  • Received:2013-08-30 Revised:2013-11-16 Online:2014-05-15 Published:2014-05-15
  • Contact: Zhang Jun E-mail:zhangjun@siat.ac.cn
  • About author:78.55.Et; 61.05.cp; 68.55.Ln
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11304276), the Natural Science Foundation of Guangdong Province of China (Grant No. S2013010014965), the Cultivation of Innovative Talents of the Colleges and Universities of Guangdong Province of China (Grant No. LYM10098), the China Postdoctoral Science Foundation (Grant No. 20090461331), and the Natural Science Foundation of Zhanjiang Normal College, China (Grant No. ZL1005).

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摘要： N-ion-implantation to a fluence of 1× 1015 ions/cm2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.

关键词: ZnS thin films, vacuum evaporation, ion implantation, X-ray diffraction

Abstract: N-ion-implantation to a fluence of 1× 1015 ions/cm2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.

Key words: ZnS thin films, vacuum evaporation, ion implantation, X-ray diffraction

中图分类号:  (II-VI semiconductors)

  • 78.55.Et
61.05.cp (X-ray diffraction) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)