中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57803-057803.doi: 10.1088/1674-1056/23/5/057803
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
薛书文, 张军, 全军
Xue Shu-Wen (薛书文), Zhang Jun (张军), Quan Jun (全军)
摘要: N-ion-implantation to a fluence of 1× 1015 ions/cm2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.
中图分类号: (II-VI semiconductors)