Non-homogeneous SiGe-on-insulator formed by germanium condensation process

doi:10.1088/1674-1056/23/4/048109

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48109-048109.doi: 10.1088/1674-1056/23/4/048109

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

黄诗浩, 李成, 卢卫芳, 王尘, 林光杨, 赖虹凯, 陈松岩

Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

收稿日期:2013-07-14 修回日期:2013-10-24 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Huang Shi-Hao (黄诗浩), Li Cheng (李成), Lu Wei-Fang (卢卫芳), Wang Chen (王尘), Lin Guang-Yang (林光杨), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩)

Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

Received:2013-07-14 Revised:2013-10-24 Online:2014-04-15 Published:2014-04-15
Contact: Li Cheng E-mail:lich@xmu.edu.cn
About author:81.65.Mq; 71.55.Cn; 81.30.Bx
Supported by:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

摘要/Abstract

摘要： Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on-insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.

关键词: SGOI, Ge condensation, non-homogeneity

Abstract: Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on-insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.

Key words: SGOI, Ge condensation, non-homogeneity

中图分类号: (Oxidation)

81.65.Mq

71.55.Cn (Elemental semiconductors) 81.30.Bx (Phase diagrams of metals, alloys, and oxides)

黄诗浩, 李成, 卢卫芳, 王尘, 林光杨, 赖虹凯, 陈松岩. Non-homogeneous SiGe-on-insulator formed by germanium condensation process[J]. 中国物理B, 2014, 23(4): 48109-048109.

Huang Shi-Hao (黄诗浩), Li Cheng (李成), Lu Wei-Fang (卢卫芳), Wang Chen (王尘), Lin Guang-Yang (林光杨), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩). Non-homogeneous SiGe-on-insulator formed by germanium condensation process[J]. Chin. Phys. B, 2014, 23(4): 48109-048109.

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Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

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