中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48108-048108.doi: 10.1088/1674-1056/23/4/048108

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

朱乃伟, 胡明, 夏晓旭, 韦晓莹, 梁继然   

  1. School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2013-09-04 修回日期:2013-10-24 出版日期:2014-04-15 发布日期:2014-04-15
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

Zhu Nai-Wei (朱乃伟), Hu Ming (胡明), Xia Xiao-Xu (夏晓旭), Wei Xiao-Ying (韦晓莹), Liang Ji-Ran (梁继然)   

  1. School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
  • Received:2013-09-04 Revised:2013-10-24 Online:2014-04-15 Published:2014-04-15
  • Contact: Hu Ming E-mail:huming@tju.edu.cn
  • About author:81.40.Gh; 81.05.Hd; 81.40.Rs; 81.40.Tv
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).

PDF (PC)

590

赞

摘要： The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-℃ hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

关键词: rapid thermal process, VO2 thin film, phase transition, modification

Abstract: The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-℃ hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

Key words: rapid thermal process, VO2 thin film, phase transition, modification

中图分类号:  (Other heat and thermomechanical treatments)

  • 81.40.Gh
81.05.Hd (Other semiconductors) 81.40.Rs (Electrical and magnetic properties related to treatment conditions) 81.40.Tv (Optical and dielectric properties related to treatment conditions)