Valence band variation in Si (110) nanowire induced by a covered insulator

doi:10.1088/1674-1056/19/1/014601

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 14601-014601.doi: 10.1088/1674-1056/19/1/014601

Valence band variation in Si (110) nanowire induced by a covered insulator

樊春¹, 孙爱东¹, 许洪华², 刘晓彦², 何毓辉², 杜刚², 韩汝琦², 康晋锋²

(1)Computer Center of Peking University, Beijing 100871, China; (2)Institute of Microelectronics, Peking University & Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China

收稿日期:2009-05-04 修回日期:2009-06-30 出版日期:2010-01-15 发布日期:2010-01-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2006CB302705) and the Foundation for Key Program of Ministry of Education, China (Grant No. 107003).

Valence band variation in Si (110) nanowire induced by a covered insulator

Xu Hong-Hua(许洪华)^a), Liu Xiao-Yan(刘晓彦)^a)†, He Yu-Hui(何毓辉)^a), Fan Chun(樊春)^b), Du Gang(杜刚)^a), Sun Ai-Dong(孙爱东)^b), Han Ru-Qi(韩汝琦)^a), and Kang Jin-Feng(康晋锋)^a)

^a Institute of Microelectronics, Peking University & Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China; ^b Computer Center of Peking University, Beijing 100871, China

Received:2009-05-04 Revised:2009-06-30 Online:2010-01-15 Published:2010-01-15
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2006CB302705) and the Foundation for Key Program of Ministry of Education, China (Grant No. 107003).

摘要/Abstract

摘要： In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6 × 6k $\cdot$ p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO₂ insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO₂ insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO₂ insulator, the strain of the HfO₂ gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO₂ insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design.

Abstract: In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6 × 6k $\cdot$ p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO₂ insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO₂ insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO₂ insulator, the strain of the HfO₂ gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO₂ insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design.

Key words: silicon nanowire, valence band, thermal residual strain

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

62.25.-g (Mechanical properties of nanoscale systems) 71.15.-m (Methods of electronic structure calculations) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.65.Mq (Oxidation)

许洪华, 刘晓彦, 何毓辉, 樊春, 杜刚, 孙爱东, 韩汝琦, 康晋锋. Valence band variation in Si (110) nanowire induced by a covered insulator[J]. 中国物理B, 2010, 19(1): 14601-014601.

Xu Hong-Hua(许洪华), Liu Xiao-Yan(刘晓彦), He Yu-Hui(何毓辉), Fan Chun(樊春), Du Gang(杜刚), Sun Ai-Dong(孙爱东), Han Ru-Qi(韩汝琦), and Kang Jin-Feng(康晋锋) . Valence band variation in Si (110) nanowire induced by a covered insulator[J]. Chin. Phys. B, 2010, 19(1): 14601-014601.

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Valence band variation in Si (110) nanowire induced by a covered insulator

Valence band variation in Si (110) nanowire induced by a covered insulator

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