中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48105-048105.doi: 10.1088/1674-1056/23/4/048105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing

闫金良, 赵银女, 李超   

  1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • 收稿日期:2013-08-22 修回日期:2013-09-22 出版日期:2014-04-15 发布日期:2014-04-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10974077), the InnovationProject of Shandong Graduate Education, China (Grant No. SDYY13093), and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2010AL026).

Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing

Yan Jin-Liang (闫金良), Zhao Yin-Nü (赵银女), Li Chao (李超)   

  1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • Received:2013-08-22 Revised:2013-09-22 Online:2014-04-15 Published:2014-04-15
  • Contact: Yan Jin-Liang E-mail:yanjinliang8@sina.com
  • About author:81.15.-z; 68.55.-a; 78.20.-e; 68.60.-p
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10974077), the InnovationProject of Shandong Graduate Education, China (Grant No. SDYY13093), and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2010AL026).

PDF (PC)

363

赞

摘要： The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4 film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3 sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3 sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3 and ZnGa2O4.

关键词: multilayer films, optical band-gap, optical transmittance, photoluminescence

Abstract: The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4 film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3 sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3 sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3 and ZnGa2O4.

Key words: multilayer films, optical band-gap, optical transmittance, photoluminescence

中图分类号:  (Methods of deposition of films and coatings; film growth and epitaxy)

  • 81.15.-z
68.55.-a (Thin film structure and morphology) 78.20.-e (Optical properties of bulk materials and thin films) 68.60.-p (Physical properties of thin films, nonelectronic)