Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

doi:10.1088/1674-1056/23/1/017702

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 17702-017702.doi: 10.1088/1674-1056/23/1/017702

所属专题： TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research

• SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters • 上一篇下一篇

Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

陈峰^a, 吴文彬^a, 李舜怡^b, Andreas Klein^b

a High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;
b TechnischeUniversitt Darmstadt, Department of Materials and Earth Sciences, Petersenstraße 32, D-64287 Darmstadt, Germany

收稿日期:2013-11-29 修回日期:2013-12-27 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the German Science Foundation (DFG) within the Collaborative Research Center SFB 595 (Electrical Fatigue of Functional Materials), the National Natural Science Foundation of China (Grant Nos. 11274287, 11174001, and 11204313), and the National Basic Research Program of China (Grant No. 2012CB927402).

Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

Chen Feng (陈峰)^a, Wu Wen-Bin (吴文彬)^a, Li Shun-Yi (李舜怡)^b, Andreas Klein^b

a High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;
b TechnischeUniversitt Darmstadt, Department of Materials and Earth Sciences, Petersenstraße 32, D-64287 Darmstadt, Germany

Received:2013-11-29 Revised:2013-12-27 Online:2013-11-12 Published:2013-11-12
Contact: Chen Feng E-mail:fchen@hmfl.ac.cn
Supported by:
Project supported by the German Science Foundation (DFG) within the Collaborative Research Center SFB 595 (Electrical Fatigue of Functional Materials), the National Natural Science Foundation of China (Grant Nos. 11274287, 11174001, and 11204313), and the National Basic Research Program of China (Grant No. 2012CB927402).

摘要/Abstract

摘要： The most important interface-related quantities determined by band alignment are the barrier heights for charge transport, given by the Fermi level position at the interface. Taking Pb(Zr,Ti)O₃ (PZT) as a typical ferroelectric material and applying X-ray photoelectron spectroscopy (XPS), we briefly review the interface formation and barrier heights at the interfaces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.

关键词: ferroelectric, band alignment, Schottky barrier, X-ray photoelectron spectroscopy

Abstract: The most important interface-related quantities determined by band alignment are the barrier heights for charge transport, given by the Fermi level position at the interface. Taking Pb(Zr,Ti)O₃ (PZT) as a typical ferroelectric material and applying X-ray photoelectron spectroscopy (XPS), we briefly review the interface formation and barrier heights at the interfaces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.

Key words: ferroelectric, band alignment, Schottky barrier, X-ray photoelectron spectroscopy

中图分类号: (Pb(Zr,Ti)O3-based films)

77.55.fg

73.30.+y (Surface double layers, Schottky barriers, and work functions) 79.60.Jv (Interfaces; heterostructures; nanostructures) 77.80.Fm (Switching phenomena)

陈峰, 吴文彬, 李舜怡, Andreas Klein. Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy[J]. 中国物理B, 2014, 23(1): 17702-017702.

Chen Feng (陈峰), Wu Wen-Bin (吴文彬), Li Shun-Yi (李舜怡), Andreas Klein. Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy[J]. Chin. Phys. B, 2014, 23(1): 17702-017702.

参考文献 95

[1]	Scott J F 2007 Science 315 954
[2]	Scott J F and Dearaujo C A P 1989 Science 246 1400
[3]	Lupascu D C and Rodel J 2005 Adv. Eng. Mater. 7 882
[4]	Tagantsev A K, Stolichnov I, Colla E L and Setter N 2001 J. Appl. Phys. 90 1387
[5]	Chen F, Liu Q Z, Wang H F, Zhang F H and Wu W B 2007 Appl. Phys. Lett. 90 192907
[6]	Schorn P J, Brauhaus D, Bottger U, Waser R, Beitel G, Nagel N and Bruchhaus R 2006 J. Appl. Phys. 99 114104
[7]	Ramesh R, Gilchrist H, Sands T, Keramidas V G, Haakenaasen R and Fork D K 1993 Appl. Phys. Lett. 63 3592
[8]	Eom C B, Vandover R B, Phillips J M,Werder D J, Marshall J H, Chen C H, Cava R J, Fleming R M and Fork D K 1993 Appl. Phys. Lett. 63 2570
[9]	Chen M S, Wu T B and Wu J M 1996 Appl. Phys. Lett. 68 1430
[10]	Wu W B, Wong K H, Choy C L and Zhang Y H 2000 Appl. Phys. Lett. 77 3441
[11]	Alshareef H N, Auciello O and Kingon A I 1995 J. Appl. Phys. 77 2146
[12]	Lou X J 2009 J. Appl. Phys. 105 024101
[13]	Klein A 2012 Thin Solid Films 520 3721
[14]	Sze SMand Ng K K 2007 Physics of Semiconductor Devices (3rd edn.) (Hoboken: Wiley-Interscience)
[15]	Scott J F, Watanabe K, Hartmann A J and Lamb R N 1999 Ferroelectrics 225 83
[16]	Mönch W 2004 Electronic Properties of Semiconductor Interfaces (New York: Springer)
[17]	Cillessen J F M, Prins M W J and Wolf R M 1997 J. Appl. Phys. 81 2777
[18]	Lee J J, Thio C L and Desu S B 1995 J. Appl. Phys. 78 5073
[19]	Foster C M, Csencsits R, Bai G R, Li Z,Wills L A, Hiskes R, AlShareef H N and Dimos D 1995 Integr Ferroelectr. 10 31
[20]	Rao A V, Mansour S A and Bement A L 1996 Mater. Lett. 29 255
[21]	Chen F, Wang H F, Liu Q Z, Wu W B and Li X G 2007 Appl. Phys. Lett. 90 082904
[22]	Pintilie L, Vrejoiu I, Hesse D and Alexe M 2006 Appl. Phys. Lett. 88 102908
[23]	Du X F and Chen I W 1998 J. Appl. Phys. 83 7789
[24]	Cardona M 1965 Phys. Rev. 140 A651
[25]	Scott J F 1989 Ferroelectric Memories (New York: Springer)
[26]	Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
[27]	Piskunov S, Heifets E, Eglitis R I and Borstel G 2004 Comp. Mater. Sci. 29 165
[28]	Tufte O N and Chapman P W 1967 Phys. Rev. 155 796
[29]	Gerson R and Jaffe H 1963 J. Phys. Chem. Solids 24 979
[30]	Wu L,Wu T S,Wei C C and Liu H C 1983 J. Phys. C: Solid State phys. 16 2823
[31]	Walukiewicz W 2001 Phys. B 302–303 123
[32]	Zhang S B, Wei S H and Zunger A 1998 J. Appl. Phys. 83 3192
[33]	Zunger A 2003 Appl. Phys. Lett. 83 57
[34]	Robertson J and Clark S J 2011 Phys. Rev. B 83 075205
[35]	Waldrop J R, Grant R W, Kowalczyk S P and Kraut E A 1985 J. Vac. Sci. Technol. A 3 835
[36]	Yu E T, Mccaldin J O and Mcgill T C 1992 Solid State Physics 46 1
[37]	Franciosi A and VandeWalle C G 1996 Surf. Sci. Rep. 25 1
[38]	Tanuma S, Powell C J and Penn D R 1991 Surf. Interface. Anal. 17 911
[39]	Rao G V, Sauberlich F and Klein A 2005 Appl. Phys. Lett. 87 032101
[40]	Li S Y, Wachau A, Schafranek R, Klein A, Zheng Y L and Jakoby R 2010 J. Appl. Phys. 108 014113
[41]	Klein A, Loher T, Tomm Y, Pettenkofer C and Jaegermann W 1997 Appl. Phys. Lett. 70 1299
[42]	Schafranek R, Payan S, Maglione M and Klein A 2008 Phys. Rev. B 77 195310
[43]	Gassenbauer Y, Schafranek R, Klein A, Zafeiratos S, H¨avecker M, Knop-Gericke A and Schlógl R 2006 Phys. Rev. B 73 245312
[44]	Moulder J F and Chastain J 1995 Handbook of X Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data (Physical Electronics Division, Perkin- Elmer Corporation)
[45]	Korber C, Harvey S P, Mason T O and Klein A 2008 Surf. Sci. 602 3246
[46]	Takatani S, KushidaAbdelghafar K and Miki H 1997 Jpn. J. Appl. Phys. 36 L435
[47]	Takatani S, Miki H, Kushida-Abdelghafar K and Torii K 1999 J. Appl. Phys. 85 7784
[48]	Miyano K E, King D M, Spindt C J, Kendelewicz T, Cao R, Yu Z P, Lindau I and Spicer W E 1991 Phys. Rev. B 43 11806
[49]	Schlaf R, Klein A, Pettenkofer C and Jaegermann W 1993 Phys. Rev. B 48 14242
[50]	Klein A, Pettenkofer C, Jaegermann W, Luxsteiner M and Bucher E 1994 Surf. Sci. 321 19
[51]	Mcgilp J F 1984 J. Phys. C: Solid State Phys. 17 2249
[52]	Chasse T, Theis W, Chen T P, Evans D A, Horn K, Pettenkofer C and Jaegermann W 1991 Surf. Sci. 251 472
[53]	Klein A, Pettenkofer C, Jaegermann W, Chasse T, Horn K, Luxsteiner M C and Bucher E 1992 Surf. Sci. 264 L193
[54]	Meyer K, Schuller I K and Falco C M 1981 J. Appl. Phys. 52 5803
[55]	Brillson L J, Mosbacker H L, Hetzer M J, Strzhemechny Y, Jessen G H, Look D C, Cantwell G, Zhang J and Song J J 2007 Appl. Phys. Lett. 90 102116
[56]	Chen F, Schafranek R, Wu W B and Klein A 2011 J. Phys. D: Appl. Phys. 44 255301
[57]	Spicer W E, Chye P W, Skeath P R, Su C Y and Lindau I 1979 J. Vac. Sci. Technol. 16 1422
[58]	Rao F Y, Kim M Y, Freeman A J, Tang S P and Anthony M 1997 Phys. Rev. B 55 13953
[59]	Schafranek R and Klein A 2006 Solid State Ion. 177 1659
[60]	Niessen A K, Deboer F R, Boom R, Dechatel P F and Mattens W C M 1983 Calphad 7 51
[61]	Cheng J R and Meng Z Y 2000 J. Mater. Sci. Lett. 19 1945
[62]	Kaewchinda D, Chairaungsri T, Naksata M, Milne S J and Brydson R 2000 J. Eur. Ceram. Soc. 20 1277
[63]	Kraut E A, Grant R W, Waldrop J R and Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620
[64]	Chambers S A, Droubay T, Kaspar T C, Gutowski M and van Schilfgaarde M 2004 Surf. Sci. 554 81
[65]	Kurtin S, McGill T C and Mead C A 1969 Phys. Rev. Lett. 22 1433
[66]	Louie S G, Chelikowsky J R and Cohen M L 1977 Phys. Rev. B 15 2154
[67]	Tejedor C, Flores F and Louis E 1977 J. Phys. C: Solid State Phys. 10 2163
[68]	Tersoff J 1984 Phys. Rev. Lett. 52 465
[69]	Cardona M and Christensen N E 1987 Phys. Rev. B 35 6182
[70]	Robertson J and Chen C W 1999 Appl. Phys. Lett. 74 1168
[71]	Chen F, Schafranek R, Wu W B and Klein A 2009 J. Phys. D: Appl. Phys. 42 215302
[72]	Mónch W 1987 Phys. Rev. Lett. 58 1260
[73]	Chen F, Schafranek R, Li S, Wu W B and Klein A 2010 J. Phys. D: Appl. Phys. 43 295301
[74]	Schafranek R, Schaffner J and Klein A 2010 J. Eur. Ceram. Soc. 30 187
[75]	Katnani A D and Margaritondo G 1983 Phys. Rev. B 28 1944
[76]	Schafranek R, Li S Y, Chen F, Wu W B and Klein A 2011 Phys. Rev. B 84 045317
[77]	Payne D J, Egdell R G, Law D S L, Glans P A, Learmonth T, Smith K E, Guo J, Walsh A and Watson G W 2007 J. Mater. Chem. 17 267
[78]	Walsh A and Watson G W 2005 J. Solid State Chem. 178 1422
[79]	Walsh A, Payne D J, Egdell R G and Watson G W 2011 Chem. Soc. Rev. 40 4455
[80]	Li S, Morasch J, Klein A, Chirila C, Pintilie L, Jia L, Ellmer K, Naderer M, Reichmann K, Gróting M and Albe K 2013 Phys. Rev. B 88 045428
[81]	Ágoston P, Körtber C, Klein A, Puska M J, Nieminen R M and Albe K 2010 J. Appl. Phys. 108 053511
[82]	Robertson J 2008 Thin Solid Films 516 1419
[83]	Stengel M and Spaldin N A 2006 Nature 443 679
[84]	Stengel M, Vanderbilt D and Spaldin N A 2009 Nat. Mater. 8 392
[85]	Stengel M, Aguado-Puente P, Spaldin N A and Junquera J 2011 Phys. Rev. B 83 235112
[86]	Chen F and Klein A 2012 Phys. Rev. B 86 094105
[87]	Pintilie L, Vrejoiu I, Hesse D, LeRhun G and Alexe M 2007 Phys. Rev. B 75 104103
[88]	Lee D, Baek S H, Kim T H, Yoon J G, Folkman C M, Eom C B and Noh T W 2011 Phys. Rev. B 84 125305
[89]	Garcia V, Fusil S, Bouzehouane K, Enouz-Vedrenne S, Mathur N D, Barthelemy A and Bibes M 2009 Nature 460 81
[90]	Gruverman A, Wu D, Lu H, Wang Y, Jang H W, Folkman C M, Zhuravlev M Y, Felker D, Rzchowski M, Eom C B and Tsymbal E Y 2009 Nano Lett. 9 3539
[91]	Maksymovych P, Jesse S, Yu P, Ramesh R, Baddorf A P and Kalinin S V 2009 Science 324 1421
[92]	Crassous A, Garcia V, Bouzehouane K, Fusil S, Vlooswijk A H G, Rispens G, Noheda B, Bibes M and Barthélémy A 2010 Appl. Phys. Lett. 96 042901
[93]	Kraut E A, Grant R W, Waldrop J R and Kowalczyk S P 1983 Phys. Rev. B 28 1965
[94]	Chen F, Schafranek R,Wachau A, Zhukov S, Glaum J, Granzow T, von Seggern H and Klein A 2010 J. Appl. Phys. 108 104106
[95]	Morrison F D, Zubko P, Jung D J, Scott J F, Baxter P, Saad M M, Bowman R M and Gregg J M 2005 Appl. Phys. Lett. 86 152903

Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

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