Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

doi:10.1088/1674-1056/22/11/118504

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118504-118504.doi: 10.1088/1674-1056/22/11/118504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

熊建勇^a, 赵芳^a, 范广涵^a, 许毅钦^b, 刘小平^a, 宋晶晶^a, 丁彬彬^a, 张涛^a, 郑树文^a

a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China

收稿日期:2013-03-06 修回日期:2013-07-12 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016), the First Phase of Construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology, China (Grant No. 2010A081001001), the High Efficiency LED Epitaxy and Chip Structure and Key Technology for Industrialization, China (Grant No. 2012A080302002), and the Youth Funding of South China Normal University (Grant No. 2012KJ018).

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

Xiong Jian-Yong (熊建勇)^a, Zhao Fang (赵芳)^a, Fan Guang-Han (范广涵)^a, Xu Yi-Qin (许毅钦)^b, Liu Xiao-Ping (刘小平)^a, Song Jing-Jing (宋晶晶)^a, Ding Bin-Bin (丁彬彬)^a, Zhang Tao (张涛)^a, Zheng Shu-Wen (郑树文)^a

a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China

Received:2013-03-06 Revised:2013-07-12 Online:2013-09-28 Published:2013-09-28
Contact: Zheng Shu-Wen E-mail:LED@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016), the First Phase of Construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology, China (Grant No. 2010A081001001), the High Efficiency LED Epitaxy and Chip Structure and Key Technology for Industrialization, China (Grant No. 2012A080302002), and the Youth Funding of South China Normal University (Grant No. 2012KJ018).

摘要/Abstract

摘要： In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced significantly by using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device (APSYS).

关键词: light-emitting diodes, p-AlGaN/GaN superlattice, last quantum barrier, efficiency droop

Abstract: In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced significantly by using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device (APSYS).

Key words: light-emitting diodes, p-AlGaN/GaN superlattice, last quantum barrier, efficiency droop

中图分类号: (Light-emitting devices)

85.60.Jb

73.61.Ey (III-V semiconductors) 78.60.Fi (Electroluminescence) 87.15.A- (Theory, modeling, and computer simulation)

熊建勇, 赵芳, 范广涵, 许毅钦, 刘小平, 宋晶晶, 丁彬彬, 张涛, 郑树文. Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier[J]. 中国物理B, 2013, 22(11): 118504-118504.

Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文). Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier[J]. Chin. Phys. B, 2013, 22(11): 118504-118504.

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Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

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