High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
郑柳, 张峰, 刘胜北, 董林, 刘兴昉, 樊中朝, 刘斌, 闫果果, 王雷, 赵万顺, 孙国胜, 何志, 杨富华
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
Zheng Liu (郑柳), Zhang Feng (张峰), Liu Sheng-Bei (刘胜北), Dong Lin (董林), Liu Xing-Fang (刘兴昉), Fan Zhong-Chao (樊中朝), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Sun Guo-Sheng (孙国胜), He Zhi (何志), Yang Fu-Hua (杨富华)
中国物理B
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2013, (9): 97302
-097302
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DOI: 10.1088/1674-1056/22/9/097302