Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

doi:10.1088/1674-1056/22/8/086102

中国物理B ›› 2013, Vol. 22 ›› Issue (8): 86102-086102.doi: 10.1088/1674-1056/22/8/086102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

张战刚^{a b}, 刘杰^a, 侯明东^a, 孙友梅^a, 苏弘^a, 段敬来^a, 莫丹^a, 姚会军^a, 罗捷^a, 古松^{a b}, 耿超^{a b}, 习凯^{a b}

a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2012-10-31 修回日期:2013-01-15 出版日期:2013-06-27 发布日期:2013-06-27
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Zhang Zhan-Gang (张战刚)^{a b}, Liu Jie (刘杰)^a, Hou Ming-Dong (侯明东)^a, Sun You-Mei (孙友梅)^a, Su Hong (苏弘)^a, Duan Jing-Lai (段敬来)^a, Mo Dan (莫丹)^a, Yao Hui-Jun (姚会军)^a, Luo Jie (罗捷)^a, Gu Song (古松)^{a b}, Geng Chao (耿超)^{a b}, Xi Kai (习凯)^{a b}

a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2012-10-31 Revised:2013-01-15 Online:2013-06-27 Published:2013-06-27
Contact: Liu Jie E-mail:j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

摘要/Abstract

摘要： Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm²), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm²), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.

关键词: single event effects, effective LET method, multiple-bit upset, upset cross section

Abstract: Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm²), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm²), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.

Key words: single event effects, effective LET method, multiple-bit upset, upset cross section

中图分类号: (Semiconductors)

61.82.Fk

25.70.Bc (Elastic and quasielastic scattering) 85.30.Tv (Field effect devices)

张战刚, 刘杰, 侯明东, 孙友梅, 苏弘, 段敬来, 莫丹, 姚会军, 罗捷, 古松, 耿超, 习凯. Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation[J]. 中国物理B, 2013, 22(8): 86102-086102.

Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Su Hong (苏弘), Duan Jing-Lai (段敬来), Mo Dan (莫丹), Yao Hui-Jun (姚会军), Luo Jie (罗捷), Gu Song (古松), Geng Chao (耿超), Xi Kai (习凯). Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation[J]. Chin. Phys. B, 2013, 22(8): 86102-086102.

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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

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