中国物理B ›› 2013, Vol. 22 ›› Issue (6): 66804-066804.doi: 10.1088/1674-1056/22/6/066804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Thermal stability and electrical properties of copper nitride with In or Ti

杜允a b, 高磊b, 李超荣c, 纪爱玲b   

  1. a Information Engineering School, Hangzhou Dianzi University, Hangzhou 310018, China;
    b State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    c School of Sciences, Zhejiang Sci-Tech University, Hangzhou 310018, China
  • 收稿日期:2013-01-26 修回日期:2013-04-19 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51172272, 10904165, and 11290161) and the National Basic Research Program of China (Grant No. 2012CB933002).

Thermal stability and electrical properties of copper nitride with In or Ti

Du Yun (杜允)a b, Gao Lei (高磊)b, Li Chao-Rong (李超荣)c, Ji Ai-Ling (纪爱玲)b   

  1. a Information Engineering School, Hangzhou Dianzi University, Hangzhou 310018, China;
    b State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    c School of Sciences, Zhejiang Sci-Tech University, Hangzhou 310018, China
  • Received:2013-01-26 Revised:2013-04-19 Online:2013-05-01 Published:2013-05-01
  • Contact: Ji Ai-Ling E-mail:alji@iphy.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51172272, 10904165, and 11290161) and the National Basic Research Program of China (Grant No. 2012CB933002).

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摘要： Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N, a material that decomposes below 300 ℃, and thus promises many interesting applications in directwriting. The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure, surface morphology, and temperature dependence of electrical resistivity. More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice. A small amount of In or Ti can improve the crystallinity, and consequently the surface morphology. While the decomposition temperature is rarely influenced by In, the Ti-doped sample, Cu59.31Ti2.64N38.05, shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks, even after annealing at 500 ℃. Both In and Ti reduce the bandgap of the original Cu3N phase, resulting in a smaller electrical resistivity at room temperature. The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K. These results can be useful in improving the applicability of copper-nitride-based thin films.

关键词: ternary nitride, thin film, thermal stability, electrical properties

Abstract: Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N, a material that decomposes below 300 ℃, and thus promises many interesting applications in directwriting. The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure, surface morphology, and temperature dependence of electrical resistivity. More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice. A small amount of In or Ti can improve the crystallinity, and consequently the surface morphology. While the decomposition temperature is rarely influenced by In, the Ti-doped sample, Cu59.31Ti2.64N38.05, shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks, even after annealing at 500 ℃. Both In and Ti reduce the bandgap of the original Cu3N phase, resulting in a smaller electrical resistivity at room temperature. The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K. These results can be useful in improving the applicability of copper-nitride-based thin films.

Key words: ternary nitride, thin film, thermal stability, electrical properties

中图分类号: 

  • 68.55.Jk
73.50.Bk (General theory, scattering mechanisms) 81.05.Hd (Other semiconductors)