中国物理B ›› 2013, Vol. 22 ›› Issue (6): 66803-066803.doi: 10.1088/1674-1056/22/6/066803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Structural and optical properties of tungsten-doped vanadium dioxide films

王学进a, 刘玉颖a, 李德华b, 冯宝华b, 何志巍a, 祁铮a   

  1. a College of Science, China Agricultural University, Beijing 100083, China;
    b Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2012-05-03 修回日期:2012-10-26 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the Chinese Universities Scientific Fund (Grant No. 2013QJ007), the Science Fund of China Agricultural University (Grant No. 2007037), the Major Project Foundation of Science and Technology Innovation in Advanced Education (Grant No. 21010112).

Structural and optical properties of tungsten-doped vanadium dioxide films

Wang Xue-Jin (王学进)a, Liu Yu-Ying (刘玉颖)a, Li De-Hua (李德华)b, Feng Bao-Hua (冯宝华)b, He Zhi-Wei (何志巍)a, Qi Zheng (祁铮)a   

  1. a College of Science, China Agricultural University, Beijing 100083, China;
    b Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2012-05-03 Revised:2012-10-26 Online:2013-05-01 Published:2013-05-01
  • Contact: Wang Xue-Jin E-mail:xjwang@cau.edu.cn
  • Supported by:
    Project supported by the Chinese Universities Scientific Fund (Grant No. 2013QJ007), the Science Fund of China Agricultural University (Grant No. 2007037), the Major Project Foundation of Science and Technology Innovation in Advanced Education (Grant No. 21010112).

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摘要： Thin films of tungsten (W)-doped thermochromic vanadium dioxide (VO2) were deposited onto the soda-lime glass and fused silica by radio frequency magnetron sputtering. The doped VO2 films were characterized by X-ray diffraction, optical transmittance measurement, and near field optical microscopy with Raman. X-ray diffraction patterns show that the (011) peak of W-doped thermochromic VO2 film shifts to a lower diffraction angle with the increase of W concentration. The optical measurements indicated that the transmittance change (ΔT) at wavelength of 2500 nm drops from 65% (ΔT at 35 ℃ and 80 ℃ for undoped VO2 film) to 38% (ΔT at 30 ℃ and 42 ℃ for the doped VO2 film). At the same time, phase transition temperature drops from 65 ℃ to room temperature or lower with the increase of W concentration. Near field optical microscopy image shows that the surface of W-doped VO2 film is smooth. Raman results show that the main Raman modes of W-doped VO2 are centered at 614 cm-1, the same as that of undoped VO2, suggesting no Raman mode changes for lightly W-doped VO2 at room temperature, due to no phase transition appearing under this condition.

关键词: tungsten-doped vanadium dioxide, thermochromic, magnetron sputtering

Abstract: Thin films of tungsten (W)-doped thermochromic vanadium dioxide (VO2) were deposited onto the soda-lime glass and fused silica by radio frequency magnetron sputtering. The doped VO2 films were characterized by X-ray diffraction, optical transmittance measurement, and near field optical microscopy with Raman. X-ray diffraction patterns show that the (011) peak of W-doped thermochromic VO2 film shifts to a lower diffraction angle with the increase of W concentration. The optical measurements indicated that the transmittance change (ΔT) at wavelength of 2500 nm drops from 65% (ΔT at 35 ℃ and 80 ℃ for undoped VO2 film) to 38% (ΔT at 30 ℃ and 42 ℃ for the doped VO2 film). At the same time, phase transition temperature drops from 65 ℃ to room temperature or lower with the increase of W concentration. Near field optical microscopy image shows that the surface of W-doped VO2 film is smooth. Raman results show that the main Raman modes of W-doped VO2 are centered at 614 cm-1, the same as that of undoped VO2, suggesting no Raman mode changes for lightly W-doped VO2 at room temperature, due to no phase transition appearing under this condition.

Key words: tungsten-doped vanadium dioxide, thermochromic, magnetron sputtering

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
81.15.Cd (Deposition by sputtering) 87.64.km (Infrared) 87.64.kp (Raman)