SBT-memristor-based crossbar memory circuit

doi:10.1088/1674-1056/abd7dc

中国物理B ›› 2021, Vol. 30 ›› Issue (6): 68402-068402.doi: 10.1088/1674-1056/abd7dc

SBT-memristor-based crossbar memory circuit

Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚)^†

College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, China

收稿日期:2020-11-03 修回日期:2020-12-15 接受日期:2021-01-04 出版日期:2021-05-18 发布日期:2021-06-01
通讯作者: Gang Dou E-mail:dougang521@sdust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61703246 and 61703247), the Qingdao Science and Technology Plan Project (Grant No. 19-6-2-2-cg), and the Elite Project of Shandong University of Science and Technology.

SBT-memristor-based crossbar memory circuit

Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚)^†

College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, China

Received:2020-11-03 Revised:2020-12-15 Accepted:2021-01-04 Online:2021-05-18 Published:2021-06-01
Contact: Gang Dou E-mail:dougang521@sdust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61703246 and 61703247), the Qingdao Science and Technology Plan Project (Grant No. 19-6-2-2-cg), and the Elite Project of Shandong University of Science and Technology.

摘要/Abstract

摘要： Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest. In this paper, the SPICE model of Sr_0.95Ba_0.05TiO₃ (SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4×4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8×8 crossbar multi-value memory circuits to the images memory.

关键词: memristor, memory, SPICE, crossbar

Abstract: Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest. In this paper, the SPICE model of Sr_0.95Ba_0.05TiO₃ (SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4×4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8×8 crossbar multi-value memory circuits to the images memory.

Key words: memristor, memory, SPICE, crossbar

中图分类号: (Passive circuit components)

84.32.-y

85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)

Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚). SBT-memristor-based crossbar memory circuit[J]. 中国物理B, 2021, 30(6): 68402-068402.

Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚). SBT-memristor-based crossbar memory circuit[J]. Chin. Phys. B, 2021, 30(6): 68402-068402.

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SBT-memristor-based crossbar memory circuit

SBT-memristor-based crossbar memory circuit

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