Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17201-017201.doi: 10.1088/1674-1056/22/1/017201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Interlayer transport of electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

何良明   

  1. College of Science, Guangxi University for Nationalities, Nanning 530006, China
  • 收稿日期:2012-04-10 修回日期:2012-06-28 出版日期:2012-12-01 发布日期:2012-12-01
  • 基金资助:
    Project supported by the Department of Education of Guangxi, China (Grant No. 200911MS78).

Interlayer transport of electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

He Liang-Ming (何良明)   

  1. College of Science, Guangxi University for Nationalities, Nanning 530006, China
  • Received:2012-04-10 Revised:2012-06-28 Online:2012-12-01 Published:2012-12-01
  • Contact: He Liang-Ming E-mail:hlm66225@sohu.com
  • Supported by:
    Project supported by the Department of Education of Guangxi, China (Grant No. 200911MS78).

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摘要： The interlayer transport of electron in bilayer graphene influenced by phonon in the presence of biased potential is investigated using the tight-binding approach. The in-plane optical mode E2g and out-of-plane optical mode B1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon mode the function of the transport probability with respect to applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.

关键词: electronic transport, conductivity of specific materials

Abstract: The interlayer transport of electron in bilayer graphene influenced by phonon in the presence of biased potential is investigated using the tight-binding approach. The in-plane optical mode E2g and out-of-plane optical mode B1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon mode the function of the transport probability with respect to applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.

Key words: electronic transport, conductivity of specific materials

中图分类号:  (Scattering by phonons, magnons, and other nonlocalized excitations)

  • 72.10.Di
72.80.-r (Conductivity of specific materials)